DISCRETE SEMICONDUCTORS
DATA SHEET
fpage
M3D119
1N5817; 1N5818; 1N5819 Schottky barrier diodes
Product specification ...
DISCRETE SEMICONDUCTORS
DATA SHEET
fpage
M3D119
1N5817; 1N5818; 1N5819
Schottky barrier diodes
Product specification Supersedes data of April 1992 1996 May 03
Philips Semiconductors
Product specification
Schottky barrier diodes
FEATURES Low switching losses Fast recovery time Guard ring protected Hermetically sealed leaded glass package. APPLICATIONS Low power, switched-mode power supplies Rectifying Polarity protection.
handbook, 4 columns
1N5817; 1N5818; 1N5819
DESCRIPTION The 1N5817 to 1N5819 types are
Schottky barrier diodes fabricated in planar technology, and encapsulated in SOD81 hermetically sealed glass packages incorporating ImplotecTM(1) technology.
(1) Implotec is a trademark of Philips.
k
a
MAM218
Fig.1 Simplified outline (SOD81) and symbol.
1996 May 03
2
Philips Semiconductors
Product specification
Schottky barrier diodes
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VR 1N5817 1N5818 1N5819 VRSM non-repetitive peak reverse voltage 1N5817 1N5818 1N5819 VRRM repetitive peak reverse voltage 1N5817 1N5818 1N5819 VRWM crest working reverse voltage 1N5817 1N5818 1N5819 IF(AV) IFSM average forward current non-repetitive peak forward current PARAMETER continuous reverse voltage
1N5817; 1N5818; 1N5819
CONDITIONS − − − − − − − − − − − − Tamb = 55 °C; Rth j-a = 100 K/W; note 1; VR(equiv) = 0.2 V; note 2 t = 8.3 ms half sine wave; JEDEC method; Tj = Tj max prior to surge: VR = 0 − −
MIN.
MAX. 20 30 40 ...