PRELIMINARY
Notice：This is not a final specification Some parametric are subject to change.
I...
PRELIMINARY
Notice：This is not a final specification Some parametric are subject to change.
TRANSISTOR>
INA6006AS1
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE
DESCRIPTION
INA6006AS1 is a silicon PNP transistor. It is designed with high voltage.
FEATURE
・Small package for easy mounting. ・High voltage VCEO = -150V ・Low voltage VCE(sat) = -0.5V(MAX) ・Complementary ： INC6006AS1
APPLICATION
High voltage switching.
OUTLINE DRAWING
4.0
UNIT：ｍｍ
7.5MAX
14.0 13.0MIN 3.0
1.0 1.0
0.1 0.45 2.5 2.5
①②③
0.4
2.5
TERMINAL CONNECTOR ①：EMITTER ②：COLLECTOR ③：BASE
JEITA：JEDEC：-
MAXIMUM RATING（Ta=25℃）
SYMBOL
PARAMETER
VCBO Collector to Base voltage VEBO Emitter to Base voltage VCEO Collector to Emitter voltage I CM Peak collector current I C Collector current PC Collector dissipation(Ta=25℃) Tj Junction temperature Tstg Storage temperature
ELECTRICAL CHARACTERISTICS（Ta=25℃）
RATING -160 -5 -150 -200 -100 600 ＋150
-55～＋150
UNIT V V V mA mA mW ℃ ℃
SYMBOL
PARAMETER
TEST CONDITIONS
V(BR)CBO V(BR)EBO V(BR)CEO ICBO IEBO hFE1 hFE2 hFE3 VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 VBE(on) fT Cob
C to B break down voltage E to B break down voltage C to E break down voltage Collector cut off current Emitter cut off current DC forward current gain1 DC forward current gain2 DC forward current gain3 C to E saturation voltage1 C to E saturation voltage2 B to E saturation voltage1 B to E saturation voltage2 B to E on voltage Gain bandwidth product Collector out...
