PRELIMINARY
Notice：This is not a final specification Some parametric are subject to change.
FEATURE
・Linearity of hFE is...
PRELIMINARY
Notice：This is not a final specification Some parametric are subject to change.
FEATURE
・Linearity of hFE is good ・Low voltage VCE(sat) = 250mV(MAX),Ic=2A ・Complementary INA5003AH1
<
TRANSISTOR>
INC5003AH1
SILICON
NPN EPITAXIAL TYPE
OUTLINE DRAWING
6.60 5.34
UNIT：ｍｍ
2.30 0.50
0.83 2.74 6.10 2.16 10.00
1.52
APPLICATION
Motor drive, IGBT drive, DC/DC convertor
1 23
2.286
0.76
JEITA:SC-63 JEDEC:TO-252
0.127max
0.50
TERMINAL CONNECTOR （1）BASE （2）COLLECTOR （3）EMITTER
MAXIMUM RATING（Ta=25℃）
SYMBOL VCBO VCEO VEBO IC I CP
PARAMETER Collector to Base voltage Collector to Emitter voltage Emitter to Base voltage Collector current Collector current
PC Collector dissipation
Tj Junction temperature Tstg Storage temperature
ELECTRICAL CHARACTERISTICS（Ta=25℃）
TEST CONDITIONS DC
Pulse(PW=<300us, Duty cycle=<10%) Ta=25℃ Tc=25℃ -
SYMBOL
PARAMETER
TEST CONDITIONS
V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE1
hFE2
C to B break down voltage C to E break down voltage E to B break down voltage Collector cut off current Emitter cut off current DC forward current gain DC forward current gain
VCE(sat) C to E saturation voltage
VBE(sat) fT Cob ton tstg tf
B to E saturation voltage Gain band width product Collector output capacitance Turn on time Storage time Fall time
Ic=100uA
Ic=10mA
IE=100uA VCB=120V VEB=6V VCE=1V, Ic=2A VCE=1V, Ic=5A IC=2A, IB=100mA IC=6A, IB=300mA IC=6A, IB=300mA VCE=10V, IE=-100mA VCB=10V, IE=0A, f=1MHz
IC=3A, IB1=-IB2=0.15A VCC=30V, RL=10Ω VBB=7.5V...
