DESCRIPTION
INC6006AP1 is a silicon NPN transistor. It is designed with high voltage.
FEATURE
・Small package for easy mo...
DESCRIPTION
INC6006AP1 is a silicon
NPN transistor. It is designed with high voltage.
FEATURE
・Small package for easy mounting. ・High voltage VCEO = 160V ・Low voltage VCE(sat) = 0.2V(MAX) ・Complementary : INA6006AP1
APPLICATION
High voltage switching.
0.8 MIN 2.5
4.2 MAX
TRANSISTOR>
INC6006AP1
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
OUTLINE DRAWING
4.6 MAX 1.6
UNIT:mm
1.5
E CB
0.53 MAX
1.5 3.0
0.48 MAX
0.4
マーキング MARKING
TERMINAL CONNECTOR
E:EMEI:TエTEミRッタ C:CCBO::LベLコEレーCTクスOタR B:BASE
JEITA:SC-62 EJJEIAEDJDEEC: CS::CS-O6T2-89
JEDEC:―
MAXIMUM RATING(Ta=25℃)
SYMBOL
PARAMETER
VCBO Collector to Base voltage VEBO Emitter to Base voltage VCEO Collector to Emitter voltage I CM Peak collector current I C Collector current PC Collector dissipation(Ta=25℃) Tj Junction temperature Tstg Storage temperature
ELECTRICAL CHARACTERISTICS(Ta=25℃)
SYMBOL
PARAMETER
V(BR)CBO V(BR)EBO V(BR)CEO
ICBO IEBO hFE1 hFE2 hFE3 VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 fT Cob Cib
C to B break down voltage E to B break down voltage C to E break down voltage Collector cut off current
Emitter cut off current DC forward current gain1 DC forward current gain2 DC forward current gain3 C to E saturation voltage1 C to E saturation voltage2 B to E saturation voltage1 B to E saturation voltage2 Gain bandwidth product Collector output capacitance Collector input capacitance
RATING 180 6 160 200 100 500 +150
-55~+150
UNIT V V V mA mA mW ℃ ℃
TEST CONDITIONS
I C...