INC6006AP1

DESCRIPTION INC6006AP1 is a silicon NPN transistor. It is designed with high voltage. FEATURE ・Small package for easy mounting. ・High voltage VCEO = 160V ・Low voltage VCE(sat) = 0.2V(MAX) ・Complementary ： INA6006AP1 APPLICATION High voltage switching. 0.8 MIN 2.5 4.2 MAX TRANSISTOR> INC6006AP1 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE OUTLINE DRAWING 4.6 MAX 1.6 UNIT：ｍｍ 1.5 E CB 0.53 MAX 1.5 3.0 0.48 MAX 0.4 マーキング MARKING TERMINAL CONNECTOR E：EMＥI:TエTEミRッタ C：CＣＢO::LベLコEレーCTクスOタR B：BASE JEITA:SC-62 EJJEIAEDJDEEC: CS::CS-O6T2-89 JEDEC：― MAXIMUM RATING（Ta=25℃） SYMBOL PARAMETER VCBO Collector to Base voltage VEBO Emitter to Base voltage VCEO Collector to Emitter voltage I CM Peak collector current I C Collector current PC Collector dissipation(Ta=25℃) Tj Junction temperature Tstg Storage temperature ELECTRICAL CHARACTERISTICS（Ta=25℃） SYMBOL PARAMETER V(BR)CBO V(BR)EBO V(BR)CEO ICBO IEBO ｈＦＥ1 ｈＦＥ2 ｈＦＥ3 VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 fT Cob Cib C to B break down voltage E to B break down voltage C to E break down voltage Collector cut off current Emitter cut off current DC forward current gain1 DC forward current gain2 DC forward current gain3 C to E saturation voltage1 C to E saturation voltage2 B to E saturation voltage1 B to E saturation voltage2 Gain bandwidth product Collector output capacitance Collector input capacitance RATING 180 6 160 200 100 500 ＋150 -55～＋150 UNIT V V V mA mA mW ℃ ℃ TEST CONDITIONS I C...