ISA1287AS1

〈SMALL-SIGNAL TRANSISTOR〉 ISA1287AS1 FOR RELAY DRIVE, POWOR SUPPLY APPLICATION SILICON PNP EPITAXIAL TYPE DESCRIPTION ISA1287AS1 is a silicon PNP epitaxial type transistor. Designed with high voltage, high collector current, dissipation and high hFE. Complementary with ISC3247AS1. FEATURE ●High hFE hFE=400 to 800 ●High voltage. VCEO=-50V ●Low collector to emitter saturation voltage. VCE(sat)=-0.2V (@IC=-500mA, IB=-10mA) ●High collector dissipation. PC=600mW APPLICATION Relay drive or power supply of audio machine, VCR, and other electronic machine. MAXIMUM RATINGS（Ta=25℃） . Symbol Parameter VCBO Collector to Base voltage VEBO Emitter to Base voltage VCEO Collector to Emitter voltage IC Collector current ICM Peak collector current Pc Collector dissipation Tj Junction temperature Tstg Storage temperature Ratings -50 -6 -50 -1 -2 600 ＋150 -55～＋150 Unit V V V A A mW ℃ ℃ OUTLINE DRAWING 4.0 14.0 13.0MIN 3.0 1.0 1.0 0.4 2.5 0.1 0.45 2.5 2.5 ①②③ JEITA： JEDEC： TERMINAL CONNECTER ①：EMITTER ②：COLLECTOR ③：BASE 7.5MAX Unit：ｍｍ ELECTRICAL CHARACTERISTICS（Ta=25℃） Parameter Parameter Test conditions V(BR)CBO V(BR)EBO V(BR)CEO ICBO IEBO hFE※ VCE(sat) fT Cob C to B break down voltage E to B break down voltage C to E break down voltage Collector cut off current Emitter cut off current DC forward current gain C to E Saturation Voltage Gain band width product Collector output capacitance IC=-10μA, IE=0mA IE=-10μA, IC=0mA IC=-1mA, RBE=∞ VCB=-40V, IE=0mA VEB=-2V, IC=0mA VCE=-...