ISA1995AS1

〈SMALL-SIGNAL TRANSISTOR〉 ISA1995AS1 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE(FRAME TYPE) DESCRIPTION ISA1995AS1 is mini package resin sealed silicon PNP epitaxial transistor, It is designed for low frequency voltage application. . FEATURE ●Small collector to emitter saturation voltage. VCE(sat)=max-0.3V（@Ic=-30mA、IB=-1.5mA） ●Excellent linearity of DC forward gain. ●Super mini package for easy mounting OUTLINE DRAWING 4.0 Unit：ｍｍ 7.5MAX 14.0 13.0MIN 3.0 1.0 1.0 0.1 0.45 2.5 2.5 ①②③ 0.4 2.5 APPLICATION small type machine low frequency voltage Amplify application. JEITA： JEDEC： MAXIMUM RATINGS（Ta=25℃） . Symbol Parameter VCBO Collector to Base voltage VCEO Collector to Emitter voltage VEBO Emitter to Base voltage I O Collector current Pc Collector dissipation Tj Junction temperature Tstg Storage temperature Ratings -50 -6 -50 -100 450 +150 -55～+150 Unit V V V mA mW ℃ ℃ TERMINAL CONNECTER ①：EMITTER ②：COLLECTOR ③：BASE MARKING A95 □□R hFE アイテム ELECTRICAL CHARACTERISTICS（Ta=25℃） Parameter Symbol C to E break down voltage Collector cut off current Emitter cut off current DC forward current gain DC forward current gain C to E Saturation Vlotage Gain bandwidth product Collector output capacitance V(BR)CEO ICBO IEBO hFE hFE VCE(sat) fT Cob Test conditions IC= -100μA , RBE= ∞ V CB= -50V , I E= 0mA V EB= -4V , I C= 0mA V CE = -6V , IC= -1mA V CE = -6V , IC= -0.1mA I C= -30mA , I B= -1.5mA V CE= -6V , I E= 10mA V CB= -6V , I E= 0mA,f=1MHz Li...