RT1N137S
Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type
DESCRIPTION
RT1N137S is a one ch...
RT1N137S
Transistor With Resistor For Switching Application Silicon
NPN Epitaxial Type
DESCRIPTION
RT1N137S is a one chip
transistor
with built-in bias resistor,
NPN type is RT1P137S.
OUTLINE DRAWING
4.0
Unit: mm
7.5MAX
14.0 13.0MIN 3.0
1.0 1.0
FEATURE Built-in bias resistor (R1=1kΩ, R2=22kΩ) High collector current (Ic=1A) Low VCE(sat) VCE(sat)=0.3V
(@Ic=300mA/IB=3mA)
APPLICATION Inverted circuit, Switching circuit, Interface circuit, Driver circuit
2.5
0.1 0.45 2.5 2.5
①②③
0.4
R1 B (IN)
R2
C (OUT)
E (GND)
JEITA:- JEDEC:- Terminal Connector
①:EMITTER ②:COLLECTOR ③:BASE
MAXIMUM RATING (Ta=25℃)
SYMBOL
VCBO VEBO VCEO
IC ICM PC Tj Tstg
PARAMETER Collector to Base voltage Emitter to Base voltage Collector to Emitter voltage Collector current Peak Collector current Collector dissipation Junction temperature Storage temperature
RATING
40 6 40 1 2 600 150 -55~+150
ELECTRICAL CHARACTERISTICS (Ta=25℃)
UNIT
V V V A A mW ℃
℃
SYMBOL
V(BR)CEO ICBO IEBO hFE
VCE(sat) VI(ON) VI(OFF)
R1 R2/R1
fT
PARAMETER
C to E breakdown voltage Collector cut off current Emitter cut off current DC forward current gain C to E saturation voltage Input on voltage Input off voltage Input resistor Resistor ratio Gain band width product
TEST CONDITION
IC=1mA,RBE=∞ VCB=40V,IE =0 VEB=5V,IC =0 VCE=6V,IC =100mA IC =300mA,IB =3mA VCE=0.2V,IC =300mA VCE=5V,IC =100μA -
- VCE=6V,IE =-10mA
MARKING
N13 7 □□
type name
Lot №
MIN
LIMIT TYP
MAX
UNIT
40 - - V
- - -0.1 μA
168 217 310 μA
100 -
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