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L2SA1365FLT1G Dataheets PDF



Part Number L2SA1365FLT1G
Manufacturers Leshan Radio Company
Logo Leshan Radio Company
Description General Purpose Transistor
Datasheet L2SA1365FLT1G DatasheetL2SA1365FLT1G Datasheet (PDF)

LESHAN RADIO COMPANY, LTD. General Purpose Transistor DESCRIPTION L2SA1365 LT1G is a mini packagesilicon PNP epitaxial transistor, designed with high collector current and small VCE(sat). F.EATURE ●Small collector to emitter saturation voltage. VCE(sat)=-0.2V typ ●Excellent linearity of DC forward current gain. ●Super mini package for easy mounting ●High collector current ICM=-1A ●High gain band width product fT =180MHz typ ●We declare that the material of product compliance with RoHS requireme.

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