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Switching Diode. LL4448 Datasheet

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Switching Diode. LL4448 Datasheet
















LL4448 Diode. Datasheet pdf. Equivalent













Part

LL4448

Description

High Speed SMD Switching Diode



Feature


Small Signal Product CREAT BY ART LL41 48/LL4448/LL914B Taiwan Semiconductor High Speed SMD Switching Diode FEATURE S - Fast switching device (trr<4.0ns) - Surface device type mounting - Matte T in(Sn) terminal finish - Pb free versio n and RoHS compliant MECHANICAL DATA - Case: Mini-MELF Package - High tempera ture soldering guaranteed: 270°C/10s - Polarity: Indicate.
Manufacture

Taiwan Semiconductor

Datasheet
Download LL4448 Datasheet


Taiwan Semiconductor LL4448

LL4448; d by black cathode band - Weight: 31mg ( approximately) MINI MELF Hermetically Sealed Glass MAXIMUM RATINGS AND ELECT RICAL CHARACTERISTICS (TA=25℃ unless otherwise noted) PARAMETER SYMBOL VA LUE Power Dissipation Repetitive Peak Reverse Voltage PD VRRM 500 75 Rever se Voltage VR 75 Peak Forward Surge C urrent (Note 1) IFSM 2 Non-Repetitiv e Peak Forward Curre.


Taiwan Semiconductor LL4448

nt Mean Forward Current IFM IF(AV) 450 150 Forward Continuous Current IF 15 0 Repetitive Peak Forward Current IFR M 450 Thermal Resistance (Junction to Ambient) (Note 2) Junction and Storage Temperature Range RθJA TJ , TSTG 30 0 -65 to +175 PARAMETER SYMBOL Rever se Breakdown Voltage IR=100μA IR=5μA V(BR) Forward Voltage LL4448, LL914 B LL4148 LL4448, LL91.


Taiwan Semiconductor LL4448

4B Reverse Leakage Current IF=5 mA IF=5 0 mA IF=100 mA VR=20V VR=75V VF IR Ju nction Capacitance Reverse Recovery Tim e VR=0 (Note 3) f=1.0MHz CJ trr MIN 100 75 - 0.62 - MAX - 0.72 1 1 25 5 4 4 Note 1: Test condition : 8.3 ms sin gle half sine-wave superimposed on rate d load (JEDEC method) Note 2: Valid pro vided that electrodes are kept at ambie nt temperature Not.





Part

LL4448

Description

High Speed SMD Switching Diode



Feature


Small Signal Product CREAT BY ART LL41 48/LL4448/LL914B Taiwan Semiconductor High Speed SMD Switching Diode FEATURE S - Fast switching device (trr<4.0ns) - Surface device type mounting - Matte T in(Sn) terminal finish - Pb free versio n and RoHS compliant MECHANICAL DATA - Case: Mini-MELF Package - High tempera ture soldering guaranteed: 270°C/10s - Polarity: Indicate.
Manufacture

Taiwan Semiconductor

Datasheet
Download LL4448 Datasheet




 LL4448
Small Signal Product
CREAT BY ART
LL4148/LL4448/LL914B
Taiwan Semiconductor
High Speed SMD Switching Diode
FEATURES
- Fast switching device (trr<4.0ns)
- Surface device type mounting
- Matte Tin(Sn) terminal finish
- Pb free version and RoHS compliant
MECHANICAL DATA
- Case: Mini-MELF Package
- High temperature soldering guaranteed: 270°C/10s
- Polarity: Indicated by black cathode band
- Weight: 31mg (approximately)
MINI MELF
Hermetically Sealed Glass
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25unless otherwise noted)
PARAMETER
SYMBOL
VALUE
Power Dissipation
Repetitive Peak Reverse Voltage
PD
VRRM
500
75
Reverse Voltage
VR 75
Peak Forward Surge Current (Note 1)
IFSM
2
Non-Repetitive Peak Forward Current
Mean Forward Current
IFM
IF(AV)
450
150
Forward Continuous Current
IF 150
Repetitive Peak Forward Current
IFRM
450
Thermal Resistance (Junction to Ambient) (Note 2)
Junction and Storage Temperature Range
RθJA
TJ , TSTG
300
-65 to +175
PARAMETER
SYMBOL
Reverse Breakdown Voltage
IR=100μA
IR=5μA
V(BR)
Forward Voltage
LL4448, LL914B
LL4148
LL4448, LL914B
Reverse Leakage Current
IF=5 mA
IF=50 mA
IF=100 mA
VR=20V
VR=75V
VF
IR
Junction Capacitance
Reverse Recovery Time
VR=0
(Note 3)
f=1.0MHz
CJ
trr
MIN
100
75
-
0.62
-
-
-
-
-
-
MAX
-
-
-
0.72
1
1
25
5
4
4
Note 1: Test condition : 8.3 ms single half sine-wave superimposed on rated load (JEDEC method)
Note 2: Valid provided that electrodes are kept at ambient temperature
Note 3: Reverse recovery test conditions : IF=IR=10mA, RL=100, IRR=1mA
UNIT
mW
V
V
A
mA
mA
mA
mA
oC/W
oC
UNIT
V
V
nA
μA
pF
ns
Document Number: DS_S1408022
Version: J15




 LL4448
Small Signal Product
RATINGS AND CHARACTERISTICS CURVES
(TA=25°C unless otherwise noted)
1500
Fig. 1 Typical Forward Characteristics
1200
900
600
300
0
0.001
0.01 0.1 1 10 100
Instantaneous Forward Voltage (V)
1000
LL4148/LL4448/LL914B
Taiwan Semiconductor
Fig. 2 Reverse Current VS. Reverse Voltage
100
10
1
0.1
0.01
0
20 40 60 80 100 120
Reverse Voltage (V)
600
500
400
300
200
100
0
0
Fig. 3 Admissible Power Dissipation Curve
50 100 150
Ambient Temperature (oC)
200
10000
Fig. 5 Forward Resistance VS. Forward Current
1000
100
10
1
0.01
0.1 1 10
Forward Current (mA)
100
Document Number: DS_S1408022
1.5
1.2
0.9
0.6
0.3
0.0
0
Fig. 4 Typical Junction Capacitance
5 10 15 20 25 30
Reverse Voltage (V)
Version: J15




 LL4448
Small Signal Product
ORDER INFORMATION (EXAMPLE)
LL4148 L0G
Green compound code
Packing code
Part no.
PACKAGE OUTLINE DIMENSION
C
B
SUGGEST PAD LAYOUT
A
LL4148/LL4448/LL914B
Taiwan Semiconductor
DIM.
A
B
C
Unit (mm)
Min
3.30
1.40
0.20
Max
3.70
1.60
0.50
Unit (inch)
Min
0.130
0.055
0.008
Max
0.146
0.063
0.020
DIM.
A
B
C
D
Unit (mm)
Typ.
1.25
2.00
2.50
5.00
Unit (inch)
Typ.
0.049
0.079
0.098
0.197
Document Number: DS_S1408022
Version: J15




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