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AOD7S60 Dataheets PDF



Part Number AOD7S60
Manufacturers Alpha & Omega Semiconductors
Logo Alpha & Omega Semiconductors
Description Power Transistor
Datasheet AOD7S60 DatasheetAOD7S60 Datasheet (PDF)

AOD7S60/AOU7S60 600V 7A α MOS TM Power Transistor General Description Product Summary The AOD7S60 & AOU7S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V 100% UI.

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AOD7S60/AOU7S60 600V 7A α MOS TM Power Transistor General Description Product Summary The AOD7S60 & AOU7S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V 100% UIS Tested 100% Rg Tested 700V 33A 0.6Ω 8.2nC 1.9µJ TO252 DPAK Top View Bottom View D D TO251 Top View Bottom View S G AOD7S60 G S S D G AOU7S60 S DG G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single pulsed avalanche energy H ID IDM IAR EAR EAS TC=25°C Power Dissipation B Derate above 25oC PD MOSFET dv/dt ruggedness Peak diode recovery dv/dt dv/dt Junction and Storage Temperature Range TJ, TSTG Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds K Thermal Characteristics TL Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A Maximum Junction-to-CaseD,F Symbol RθJA RθCS RθJC Maximum 600 ±30 7 5 33 1.7 43 86 83 0.7 100 20 -55 to 150 300 Typical 45 -1.2 Maximum 55 0.5 1.5 D S Units V V A A mJ mJ W W/ oC V/ns °C °C Units °C/W °C/W °C/W Rev0: Aug 2011 www.aosmd.com Page 1 of 7 AOD7S60/AOU7S60 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V, TJ=25°C ID=250µA, VGS=0V, TJ=150°C IDSS Zero Gate Voltage Drain Current VDS=600V, VGS=0V VDS=480V, TJ=150°C IGSS Gate-Body leakage current VDS=0V, VGS=±30V VGS(th) Gate Threshold Voltage VDS=5V,ID=250µA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=3.5A, TJ=25°C VGS=10V, ID=3.5A, TJ=150°C VSD Diode Forward Voltage IS=3.5A,VGS=0V, TJ=25°C IS Maximum Body-Diode Continuous Current ISM Maximum Body-Diode Pulsed CurrentC DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance VGS=0V, VDS=100V, f=1MHz Co(er) Co(tr) Effective output capacitance, energy related I Effective output capacitance, time related J VGS=0V, VDS=0 to 480V, f=1MHz Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=100V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg Qgs Qgd tD(on) tr tD(off) tf trr Irm Qrr Total Gate Charge Gate Source Charge VGS=10V, VDS=480V, ID=3.5A Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime VGS=10V, VDS=400V, ID=3.5A, RG=25Ω Turn-Off Fall Time Body Diode Reverse Recovery Time IF=3.5A,dI/dt=100A/µs,VDS=400V Peak Reverse Recovery Current IF=3.5A,dI/dt=100A/µs,VDS=400V Body Diode Reverse Recovery Charge IF=3.5A,dI/dt=100A/µs,VDS=400V Min Typ Max Units 600 - - 650 700 - V - -1 µA - 10 - - - ±100 nΑ 2.7 3.3 3.9 V - 0.54 0.6 Ω - 1.48 1.64 Ω - 0.82 - V - - 7A - - 33 A - 372 - 28 - - 22 - pF pF pF - 65 - - 1.2 - 17.5 - pF pF Ω - 8.2 - nC - 2.0 - nC - 2.8 - nC - 19 - ns - 13 - ns - 50 - ns - 15 - ns - 198 - 18 - ns A - 2.4 - µC A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g. G. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. H. L=60mH, IAS=1.7A, VDD=150V, Starting TJ=25°C I. Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS. J. Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS. K. Wave soldering only allowed at leads. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WI.


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