AOD7S65/AOU7S65/AOI7S65
650V 7A α MOS TM Power Transistor
General Description
Product Summary
The AOD7S65 & AOU7S65 &...
AOD7S65/AOU7S65/AOI7S65
650V 7A α MOS TM Power
Transistor
General Description
Product Summary
The AOD7S65 & AOU7S65 & AOI7S65 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.
VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V
100% UIS Tested 100% Rg Tested
750V 30A 0.65Ω 9.2nC 2µJ
TO252
DPAK
Top View
Bottom View
D D
TO251
Top View
Bottom View
Top View
TO251A IPAK Bottom View
D
S G AOD7S65
G S
S GD
AOU7S65
G SD
S
D G
AOI7S65
G D S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy C
Single pulsed avalanche energy H
ID
IDM IAR EAR EAS
TC=25°C Power Dissipation B Derate above 25oC
PD
MOSFET dv/dt ruggedness Peak diode recovery dv/dt
dv/dt
Junction and Storage Temperature Range
TJ, TSTG
Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds K
Thermal Characteristics
TL
Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A Maximum Junction-to-CaseD,F
Symbol RθJA RθCS RθJC
Maximum 650 ±30 7 5
30 1.7 43 86 89 0.7 100 20 -55 to 150
300
Typical...