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1N6263W

WEJ

DIODE

RoHS 1N6263W DFeatures · Low Forward Voltage Drop T· Guard Ring Construction for Transient Protection .,L· Fast Switchi...


WEJ

1N6263W

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Description
RoHS 1N6263W DFeatures · Low Forward Voltage Drop T· Guard Ring Construction for Transient Protection .,L· Fast Switching Time · Low Reverse Capacitance · Surface Mount Package Ideally Suited for OAutomatic Insertion 1.6 SOD-123 2.70 3.70 1.05 0.55 IC CMaximum Ratings @ TA = 25°C unless otherwise specified NCharacteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage ODC Blocking Voltage RMS Reverse Voltage RForward Continuous Current Non-Repetitive Peak Forward Surge Current @ t £ 1.0s T@ t = 10ms Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Air (Note 1) COperating and Storage Temperature Range Symbol VRRM VRWM VR VR(RMS) IF IFSM Pd RqJA Tj, TSTG 1N6263W 60 42 15 50 2.0 400 375 -65 to +175 Unit V V mA mA A mW K/W °C EElectrical Characteristics @ TA = 25°C unless otherwise specified LCharacteristic EReverse Breakdown Voltage (Note 2) Reverse Leakage Current Forward Voltage Drop JJunction Capacitance EReverse Recovery Time Symbol Min Typ Max Unit Test Condition V(BR)R 60 ¾ ¾ V IR = 10mA IRM ¾ ¾ 200 nA VR = 50V VFM ¾ ¾ 0.41 1.0 V IF = 1.0mA IF = 15mA Cj ¾ 2.0 ¾ pF VR = 0V, f = 1.0MHz trr ¾ 1.0 ¾ ns IF = IR = 5.0mA Irr = 0.1 x IR, RL = 100W WNote: 1. Valid provided that terminals from the case are maintained at ambient temperature. 2. Test period <3000ms. WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:wej@yongerjia.com RoHS 1N6263W E A1 A2 0.20 cb D O.,LTDE1 IC CL L1 A CTRONSymbol EA A1 LA2 b Ec D JE E1...




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