1SS181

RoHS 1SS181 SOT-23 Plastic-Encapsulate DIODE Features DPower dissipation PD : 150 mW (Tamb=25oC) TForward Current .,LIF : 100 mA Reverse Voltage VR : 80V Operating and storage junction temperature range OTj, Tstg : -55 oC to +150oC 1 1. 2.4 1.3 SOT-23 3 2 NIC CMarking:A3 2.9 1.9 0.95 0.95 0.4 Unit:mm TROELECTRICAL CHARACTERISTICS o (Ta=25 C unless otherwise specified) CParameter Symbol EReverse breakdown voltage V(BR) LReverse Voltage leakage current IR EForward Voltage Diode Capacitance WEJReverse Recovery Time VF Ctot trr Test Condition IR=100 A VR=80V IF=100mA VR=0V f=1MHz IF=IR=10mA Irr=0.1IR MIN. MAX. Unit 80 V 0.5 A 1.2 V 4 pF 4 nS WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected] RoHS 1SS181 FORWARD CYRRENT IF(A) TDIF - VF 1 REVERSE CURRENT IR(A) .,L100m 10m O1m TA=100 C 25 C -25 C C100 IC10 0 0.2 0.4 0.6 0.8 1.0 FORWARD VOLTAGE VF(V) 1.2 10 100 C 1 75 C 100n 50 C TA=25 C 10n IR - VR 1n 0 20 40 60 80 REVERSE NOLTAGE VR(V) RONCT - VR T2.5 f=1MHz Ta=25 C 2.0 REVERSE RECOVERY TIME trr(ns) TOTAL CAPACITANCE CT (pF) EC1.5 L1.0 E0.5 0 WEJ0.3 13 10 30 100 REVERSE VOLTAGE VR (V) 1000 50 30 trr - IF Ta=25 C Fig.1 10 5 3 1 0.5 0.1 0.3 1 3 10 30 FORWARD CURRENT IF(mA) 100 WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected] ...