1SS226

RoHS 1SS226 SWITCHING DIODE SOT-23 Plastic-Encapsulate DIODE DFeatures TPower dissipation PD : 150 mW (Tamb=25oC) .,LForward Current IF : 100 mA Reverse Voltage VR : 80V OOperating and storage junction temperature range Tj, Tstg : -55 oC to +150 oC 1 1. 2.4 1.3 SOT-23 3 2 ONIC CMarking:C3 2.9 1.9 0.95 0.95 0.4 Unit:mm TRELECTRICAL CHARACTERISTICS o C(Ta=25 C unless otherwise specified) Parameter Symbol EReverse breakdown voltage V(BR) LReverse Voltage leakage current IR EForward Voltage JDiode Capacitance WEReverse Recovery Time VF Ctot trr Test Condition IR=100 A VR=80V IF=100mA VR=0V f=1MHz IF=IR=10mA Irr=0.1IR MIN. MAX. Unit 80 V 0.5 A 1.2 V 3 pF 4 nS WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected] RoHS 1SS226 FORWARD CURRENT IF(A) Typical Characteristics TDIF - VF .,L1 REVERSE CURRENT IR(A) 100m O10m C1m TA=100 C 25 C -25 C 100 IC10 N0 0.2 0.4 0.6 0.8 1.0 FORWARD VOLTAGE VF(V) 1.2 IR - VR 10 1 100n TA=100 C 75 C 50 C 10n 25 C 1n 0 20 40 60 80 REVERSE VOLTAGE VR(V) TROCT - VR f=1MHz C1.6 Ta=25 C E1.2 TOTAL CAPACITANCE CT (pF) L0.8 E0.4 J0 0.3 1 3 10 30 100 WE REVERSE VOLTAGE VR (V) REVERSE RECOVERY TIME trr(ns) 50 Ta=25 C 30 Fig.1 trr - IF 10 5 3 1 0.5 0.1 0.3 1 3 10 30 100 FORWARD CURRENT IF(mA) WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected] ...