SWITCHING DIODE
RoHS
BAS19LT1
Features
Power dissipation PD : 225 mW (Tamb=25 C)
Pluse Drain
DIF : 200 mA TReverse Vo...
SWITCHING DIODE
RoHS
BAS19LT1
Features
Power dissipation PD : 225 mW (Tamb=25 C)
Pluse Drain
DIF : 200 mA TReverse Voltage
VR : 120V
.,LOperating and storage junction temperature range Tj, Tstg : -55 C to +150 C
1
1.
2.4 1.3
SOT-23
3
2 1.BASE 2.EMITTER 3.COLLECTOR
COANODE-CATHODE 3 IC1 2 ANODE CATHODE
Marking:JP
2.9 1.9 0.95 0.95 0.4
Unit:mm
ONElectro-Optical Characteristics
RParameter
Symbol
TReverse breakdown voltage
V(BR)
CReverse Voltage leakage current
IR
EForward Voltage LDiode Capacitance WEJ EReverse Recovery Time
VF CD trr
Test Condition
IR=100 A
VR=100V IF=100mA IF=200mA VR=0V f=1MHz
(Ta=25 C)
MIN. MAX. Unit
120 V
0.1
1000 1250
5
A mV pF
50 nS
WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:
[email protected]
Typical Characteristics
RoHS
BAS19LT1
WEJ
FORWARD VOLTAGE (mV)
D3500
T3000
.,L2500
2000
TA=-55 C
1500
O1000
500
TA=155 C TA=25 C
C0 IC0.1 0.2
0.5 1 2
5 10 20 50 100 200
FORWARD VOLTAGE(mA)
Forward Voltage
REVERSE CURRENT (nA)
ON7000 R6000
5000
T4000
3000
C6
5
E4 3
L2 1
E0
TA=155 C
TA=25 C TA=-55 C
12
5 10 20
50 100 200 300
REVERSE VOLTAGE(V)
Reverse Leakage
WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:
[email protected]
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