BAV70DW

RoHS BAV70DW BAV70DW SWITCHING DIODE DFEATURES TPower dissipation .,LPD: 200 mW (Tamb=25℃) Collector current IF: 150 mA OCollector-base voltage VR: 75 V COperating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ SOT-363 NICMAKING: KJA TROELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) CParameter EReverse breakdown voltage LReverse voltage leakage current EForward voltage JJunction capacitance WEReveres recovery time Symbol V(BR) R IR VF Cj trr Test conditions IR= 100µA VR=75V VR=20V IF=1mA IF=10mA IF=50mA IF=150mA VR=0V, f=1MHz IF=IR=10mA Irr=0.1×IR RL=100Ω MIN MAX 75 2.5 0.025 715 855 1000 1250 2 4 UNIT V µA mV pF nS WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected] RoHS BAV70DW WEJ ELECTRONIC CO.,LTD WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected] ...