BAV99DW

RoHS BAV99DW BAV99DW SWITCHING DIODE DFEATURES TPower dissipation .,LPD: 200 mW (Tamb=25℃) Collector current IF: 150 mA OCollector-base voltage VR: 75 V COperating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ SOT-363 ONICMAKING: KJG ECTRELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) LParameter EReverse breakdown voltage Reverse voltage leakage current WEJForward voltage Symbol V(BR) R IR VF Test conditions IR= 100µA VR=75V VR=20V IF=1mA IF=10mA IF=50mA IF=150mA MIN MAX 75 2.5 0.025 715 855 1000 1250 UNIT V µA mV Junction capacitance Cj VR=0V, f=1MHz 2 pF Reveres recovery time IF=IR=10mA trr Irr=0.1×IR RC=100Ω 4 nS WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected] BAV99DW WEJ ELECTRONIC CO.,LTD WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected] ...