1N5819

DISCRETE SEMICONDUCTORS DATA SHEET fpage M3D119 1N5817; 1N5818; 1N5819 Schottky barrier diodes Product specification Supersedes data of April 1992 1996 May 03 Philips Semiconductors Product specification Schottky barrier diodes FEATURES Low switching losses Fast recovery time Guard ring protected Hermetically sealed leaded glass package. APPLICATIONS Low power, switched-mode power supplies Rectifying Polarity protection. handbook, 4 columns 1N5817; 1N5818; 1N5819 DESCRIPTION The 1N5817 to 1N5819 types are Schottky barrier diodes fabricated in planar technology, and encapsulated in SOD81 hermetically sealed glass packages incorporating ImplotecTM(1) technology. (1) Implotec is a trademark of Philips. k a MAM218 Fig.1 Simplified outline (SOD81) and symbol. 1996 May 03 2 Philips Semiconductors Product specification Schottky barrier diodes LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VR 1N5817 1N5818 1N5819 VRSM non-repetitive peak reverse voltage 1N5817 1N5818 1N5819 VRRM repetitive peak reverse voltage 1N5817 1N5818 1N5819 VRWM crest working reverse voltage 1N5817 1N5818 1N5819 IF(AV) IFSM average forward current non-repetitive peak forward current PARAMETER continuous reverse voltage 1N5817; 1N5818; 1N5819 CONDITIONS − − − − − − − − − − − − Tamb = 55 °C; Rth j-a = 100 K/W; note 1; VR(equiv) = 0.2 V; note 2 t = 8.3 ms half sine wave; JEDEC method; Tj = Tj max prior to surge: VR = 0 − − MIN. MAX. 20 30 40 ...