SSD30N15-60D

Elektronische Bauelemente SSD30N15-60D 22A , 150V , RDS(ON) 69mΩ N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION These miniature surface mount MOSFET utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. FEATURES Low RDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe TO-252 saves board space Fast switching speed High performance trench technology TO-252(D-Pack) A B GE C D APPLICATION DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. PACKAGE INFORMATION Package MPQ TO-252 2.5K Leader Size 13 inch K HF MJ N O P REF. Millimeter Min. Max. REF. Millimeter Min. Max. A 6.35 6.80 J 2.30 REF. B 5.20 5.50 K 0.64 0.90 C 2.15 2.40 M 0.50 1.1 D 0.45 0.58 N 0.9 1.65 E 6.8 7.5 O 0 0.15 F 2.40 3.0 P 0.43 0.58 G 5.40 6.25 H 0.64 1.20 2 Drain 1 Gate 3 Source ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Rating Drain-Source Voltage VDS 150 Gate-Source Voltage Continuous Drain Current 1 Pulsed Drain Current 2 TC=25°C Continuous Source Current (Diode Conduction) 1 Total Power Dissipation 1 TC=25°C VGS ID IDM IS PD ±20 22 60 51 50 Operating Junction and Storage Temperature Range TJ, TSTG -55~175 Thermal Resistance Rating Maximum Thermal Res...