SSD50N03

Elektronische Bauelemente SSD50N03 51A , 30V , RDS(ON) 9mΩ N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION The SSD50N03 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDS(on) and gate charge for most of the synchronous buck converter applications . TO-252(D-Pack) FEATURES Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available MARKING 50N03 Date Code PACKAGE INFORMATION Package MPQ TO-252 2.5K Leader Size 13 inch A BC D 1 Gate GE 2 Drain 3 Source K HF MJ N O P REF. Millimeter Min. Max. REF. Millimeter Min. Max. A 6.35 6.80 J 2.30 REF. B 5.20 5.50 K 0.64 0.90 C 2.15 2.40 M 0.50 1.1 D 0.45 0.58 N 0.9 1.65 E 6.8 7.5 O 0 0.15 F 2.40 3.0 P 0.43 0.58 G 5.40 6.25 H 0.64 1.20 ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Rating Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 TC=25°C 51 Continuous Drain Current, VGS=10V 1 Pulsed Drain Current 2 Single Pulse Avalanche Energy 3 TC=100°C TA=25°C TA=70°C ID IDM EAS 36 12.4 10.3 120 130 Single Pulse Avalanche Current Total Power Dissipation 4 TC=25°C IAS PD 34 41.7 Operating Junction and Storage Temperature Range TJ, TSTG -55~150 Thermal Resistance Rating Maximum Thermal Resistance Junction-Case 1 Maximum Thermal Resistance Junction-ambient 1 Rθ...