SSD50N08-14D

Elektronische Bauelemente SSD50N08-14D 55A, 80V, RDS(ON) 11mΩ N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. FEATURES Low RDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe TO-252 saves board space Fast switching speed High performance trench technology APPLICATION DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. PACKAGE INFORMATION Package MPQ TO-252 2.5K Leader Size 13’ inch TO-252(D-Pack) A BC D GE K HF MJ N O P REF. Millimeter Min. Max. REF. Millimeter Min. Max. A 6.4 6.8 J 2.30 REF. B 5.20 5.50 K 0.70 0.90 C 2.20 2.40 M 0.50 1.1 D 0.45 0.58 N 0.9 1.6 E 6.8 7.3 O 0 0.15 F 2.40 3.0 P 0.43 0.58 G 5.40 6.2 H 0.8 1.20 2 Drain 1 Gate ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Ratings Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 1 TA=25℃ Pulsed Drain Current 2 Continuous Source Current (Diode Conduction) 1 Power Dissipation 1 TA=25℃ VDS VGS ID IDM IS PD 80 ±20 55 200 55 50 Operating Junction and Storage Temperature Range TJ, TSTG Thermal Resistance Ratings Maximum Thermal Resistance Junction-Ambient 1 RθJ...