MGD622

600 V, 20 A, IGBT with Fast Recovery Diode MGD622 Features  Low Saturation Voltage  High Speed Switching  With Integrated Low VF Fast Recovery Diode  RoHS Compliant  VCE ------------------------------------------------------ 600 V  IC-------------------------------------------20 A (TC = 100 °C)  VCE(sat)-----------------------------------------------2.1 V typ.  tf --------------------------------------------------- 120 ns typ.  VF----------------------------------------------------1.2 V typ. Package TO3P-3L Applications  Microwave oven  IH cooker  Inverter circuit (1) (2) (3) GCE Equivalent circuit C (2)(4) G (1) E (3) (4) C Not to scale Absolute Maximum Ratings  Unless otherwise specified, TA = 25 °C Parameter Symbol Collector to Emitter Voltage VCE Gate to Emitter Voltage VGE Continuous Collector Current IC Pulsed Collector Current Diode Continuous Forward Current Diode Pulsed Forward Current Maximum Collector to Emitter dv/dt Power Dissipation Operating Junction Temperature Storage Temperature Range IC(PULSE) IF IF(PULSE) dv/dt PD Tj Tstg Test conditions TC = 25 °C TC= 100 °C PW ≤ 1ms Duty cycle ≤ 1 % TC = 25 °C PW ≤ 1ms Duty cycle ≤ 1 % TC ≤ 125 °C Refer to Figure 1 TC = 25 °C Rating 600 ± 30 40 20 80 30 60 5 90 150 − 55 to 150 Unit V V A A A A A V/ns W °C °C MGD622-DS Rev.1.1 Jan.23, 2015 SANKEN ELECTRIC CO.,LTD. 1 MGD622 Thermal Characteristics  Unless otherwise specified, TA = 25 °C Parameter Symbol Thermal Resistance of IGB...