Schottky Rectifier. MBR30H100CT Datasheet

MBR30H100CT Rectifier. Datasheet pdf. Equivalent

Part MBR30H100CT
Description Dual Common Cathode Schottky Rectifier
Feature MBR30H100CT Taiwan Semiconductor CREAT BY ART Dual Common Cathode Schottky Rectifier FEATURES - Low .
Manufacture Taiwan Semiconductor
Datasheet
Download MBR30H100CT Datasheet

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MBR30H100CT
MBR30H100CT
Taiwan Semiconductor
CREAT BY ART
Dual Common Cathode Schottky Rectifier
FEATURES
- Low power loss, high efficiency
- Guardring for overvoltage protection
- High surge current capability
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
Case: TO-220AB
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
Polarity: As marked
Mounting torque: 5 in-lbs maximum
Weight: 1.9 g (approximately)
TO-220AB
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25unless otherwise noted)
PARAMETER
SYMBOL
MBR30H100CT
Maximum repetitive peak reverse voltage
VRRM
100
Maximum RMS voltage
VRMS
70
Maximum DC blocking voltage
VDC 100
Maximum average forward rectified current
IF(AV)
30
Peak repetitive forward current
(Rated VR, square wave, 20KHz)
IFRM
30
Peak forward surge current, 8.3 ms single half
sine-wave superimposed on rated load
IFSM
150
Peak repetitive reverse surge current (Note 1)
Maximum instantaneous forward voltage (Note 2)
IF=15A, TJ=25
IF=15A, TJ=125
IF=30A, TJ=25
IF=30A, TJ=125
IRRM
VF
1
0.85
0.75
0.98
0.85
Maximum reverse current @ rated VR
TJ=25
TJ=125
Voltage rate of change (Rated VR)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: tp = 2.0 μs, 1.0KHz
Note 2: Pulse test with PW=300μs, 1% duty cycle
IR
dV/dt
RθJC
TJ
TSTG
10
2
10000
2
- 55 to +175
- 55 to +175
UNIT
V
V
V
A
A
A
A
V
μA
mA
V/μs
OC/W
OC
OC
Document Number: DS_D1308032
Version: I13



MBR30H100CT
CREAT BY ART
ORDERING INFORMATION
PART NO.
MBR30H100CT
PACKING CODE
C0
GREEN COMPOUND
CODE
Suffix "G"
PACKAGE
TO-220AB
MBR30H100CT
Taiwan Semiconductor
PACKING
50 / Tube
EXAMPLE
PREFERRED P/N PART NO.
MBR30H100CT C0 MBR30H100CT
MBR30H100CT C0G MBR30H100CT
PACKING CODE
C0
C0
RATINGS AND CHARACTERISTICS CURVES
(TA=25unless otherwise noted)
GREEN COMPOUND
CODE
G
DESCRIPTION
Green compound
FIG.1 FORWARD CURRENT DERATING CURVE
35
30
25
20
15
10 RESISTIVE OR
INDUCTIVELOAD
5 WITH HEATSINK
0
0 25 50 75 100 125 150 175
LEAD TEMPERATURE (oC)
150
125
100
75
50
25
0
1
FIG. 2 MAXIMUM FORWARD SURGE
CURRENT PER LEG
8.3ms Single Half Sine Wave
JEDEC Method
10
NUMBER OF CYCLES AT 60 Hz
100
FIG. 3 TYPICAL FORWARD CHARACTERISTICS
PER LEG
100
TJ=150
10
TJ=125
1
TJ=25
0.1
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
FORWARD VOLTAGE (V)
1
10000
1000
FIG. 4 TYPICAL REVERSE CHARACTERISTICS
PER LEG
TJ=150
100 TJ=125
10
1
0.1
TJ=25
0.01
10 20 30 40 50 60 70 80 90 100
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Document Number: DS_D1308032
Version: I13





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