Document
DXT2222A
40V NPN SURFACE MOUNT TRANSISTOR IN SOT89
Features
BVCEO > 40V IC = 600mA High Collector Current Complementary PNP Type: DXT2907A Ideal for Medium Power Switching or Amplification Applications Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT89 Case Material: Molded Plastic, “Green” Molding Compound;
UL Flammability Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish - Matte Tin Plated Leads, Solderable per
MIL-STD-202, Method 208 Weight: 0.072 grams (Approximate)
SOT89 Top View
C
B
E
Device Symbol
C
Top View Pin-Out
E C B
Ordering Information (Note 4)
Product DXT2222A-13
Compliance AEC-Q101
Marking K1P
Reel size (inches) 13
Tape width (mm) 12
Quantity per reel 2,500
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen and Antimony free,"Green"
and Lead-Free. 3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
(Top View)
YWW
K1P
= Manufacturer’s Code Marking K1P = Product Type Marking Code: YWW = Date Code Marking Y = Last Digit of Year ex: 1 = 2011 WW = Week Code 01 - 52
DXT2222A
Document number: DS31156 Rev. 4 - 2
1 of 6
www.diodes.com
December 2014
© Diodes Incorporated
Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current
Symbol VCBO VCEO VEBO ICM IC
Thermal Characteristics
Characteristic Power Dissipation
Thermal Resistance, Junction to Ambient Air Operating and Storage Temperature Range
(Note 5) (Note 6) (Note 5) (Note 6)
Symbol PD
RJA Tj, TSTG
Value 75 40 6 800 600
Value 0.75 1.2 166 104 -55 to +150
DXT2222A
Unit V V V mA mA
Unit W
°C/W °C
ESD Ratings (Note 7)
Characteristic Electrostatic Discharge - Human Body Model Electrostatic Discharge - Machine Model
Symbol ESD HBM ESD MM
Value 4,000 400
Unit V V
JEDEC Class 3A C
Notes:
5. For a device mounted with the exposed collector pad on minimum recommended pad layout 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under still air conditions whilst operating in a steady-state.
6. Same as Note 5, except the device is mounted with the exposed collector pad on 25mm x 25mm 1oz copper. 7. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
DXT2222A
Document number: DS31156 Rev. 4 - 2
2 of 6
www.diodes.com
December 2014
© Diodes Incorporated
DXT2222A
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic OFF CHARACTERISTICS (Note 8) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage
Symbol
BVCBO BVCEO BVEBO
Min
75 40 6.0
Collector Cutoff Current
ICBO
Collector Cutoff Current Emitter Cutoff Current Base Cutoff Current ON CHARACTERISTICS (Note 8)
ICEX IEBO IBL
DC Current Gain
35 50 75 hFE 100 40 35 50
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS Output Capacitance Input Capacitance Current Gain-Bandwidth Product
VCE(SAT)
VBE(SAT)
Cobo Cibo fT
0.6
300
Noise Figure
NF
SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time
td tr ts tf
Note: 8. Measured under pulsed conditions. Pulse width = 300µs. Duty cycle 2%.
Max
10
10 10 20
300 0.3 1.0 1.2 2.0
8 25
4.0
10 25 225 60
Unit
Test Conditions
V IC = 10µA V IC = 10mA V IE = 10µA
nA VCB = 60V A VCB = 60V, TA = +150°C nA VCE = 60V, VEB(OFF) = 3.0V nA VEB = 3.0V nA VCE = 60V, VEB(OFF) = 3.0V
IC = 100µA, VCE = 10V IC = 1.0mA, VCE = 10V IC = 10mA, VCE = 10V IC = 150mA, VCE = 10V IC = 500mA, VCE = 10V IC = 10mA, VCE = 10V, TA = -55°C IC = 150mA, VCE = 1.0V
V IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA
V IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA
pF pF MHz
dB
VCB = 10V, f = 1.0MHz
VEB = 0.5V, f = 1.0MHz VCE = 20V, IC = 20mA, f = 100MHz
VCE = 10V, IC = 150µA, RS = 1.0kΩ, f = 1.0kHz
ns VCC = 30V, IC = 150mA, ns VEB(off) = 0.5V, IB1 = 15mA ns VCC = 30V, IC = 150mA, ns IB1 = IB2 = 15mA
Typical Electrical Characteristics (@TA = +25°C unless otherwise specified.)
0.8 500
IC, COLLECTOR CURRENT (A) hFE, DC CURRENT G AIN
0.7
IB = 10mA
400 TA = 150°C
0.6
IB = 8mA
0.5
IB = 6mA
300 TA = 85°C
0.4 IB = 4mA
TA = 25°C
0.3 200
IB = 2mA
0.2
IB = 1mA
100 TA = -55°C
0.1
VCE = 10V
0.0 0
123 4
VCE, COLLECTOR EMITTER VOLTAGE (V) Figure 1 Typical Collector Current
vs. Collector Emitter Voltage
5
.