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DXT2222A Dataheets PDF



Part Number DXT2222A
Manufacturers Diodes
Logo Diodes
Description NPN SURFACE MOUNT TRANSISTOR
Datasheet DXT2222A DatasheetDXT2222A Datasheet (PDF)

DXT2222A 40V NPN SURFACE MOUNT TRANSISTOR IN SOT89 Features  BVCEO > 40V  IC = 600mA High Collector Current  Complementary PNP Type: DXT2907A  Ideal for Medium Power Switching or Amplification Applications  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability Mechanical Data  Case: SOT89  Case Material: Molded Plastic, “Green” Molding Compound; UL Flammability Rating 94V-0  Moi.

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DXT2222A 40V NPN SURFACE MOUNT TRANSISTOR IN SOT89 Features  BVCEO > 40V  IC = 600mA High Collector Current  Complementary PNP Type: DXT2907A  Ideal for Medium Power Switching or Amplification Applications  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability Mechanical Data  Case: SOT89  Case Material: Molded Plastic, “Green” Molding Compound; UL Flammability Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Terminals: Finish - Matte Tin Plated Leads, Solderable per MIL-STD-202, Method 208  Weight: 0.072 grams (Approximate) SOT89 Top View C B E Device Symbol C Top View Pin-Out E C B Ordering Information (Note 4) Product DXT2222A-13 Compliance AEC-Q101 Marking K1P Reel size (inches) 13 Tape width (mm) 12 Quantity per reel 2,500 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen and Antimony free,"Green" and Lead-Free. 3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information (Top View) YWW K1P = Manufacturer’s Code Marking K1P = Product Type Marking Code: YWW = Date Code Marking Y = Last Digit of Year ex: 1 = 2011 WW = Week Code 01 - 52 DXT2222A Document number: DS31156 Rev. 4 - 2 1 of 6 www.diodes.com December 2014 © Diodes Incorporated Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Symbol VCBO VCEO VEBO ICM IC Thermal Characteristics Characteristic Power Dissipation Thermal Resistance, Junction to Ambient Air Operating and Storage Temperature Range (Note 5) (Note 6) (Note 5) (Note 6) Symbol PD RJA Tj, TSTG Value 75 40 6 800 600 Value 0.75 1.2 166 104 -55 to +150 DXT2222A Unit V V V mA mA Unit W °C/W °C ESD Ratings (Note 7) Characteristic Electrostatic Discharge - Human Body Model Electrostatic Discharge - Machine Model Symbol ESD HBM ESD MM Value 4,000 400 Unit V V JEDEC Class 3A C Notes: 5. For a device mounted with the exposed collector pad on minimum recommended pad layout 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under still air conditions whilst operating in a steady-state. 6. Same as Note 5, except the device is mounted with the exposed collector pad on 25mm x 25mm 1oz copper. 7. Refer to JEDEC specification JESD22-A114 and JESD22-A115. DXT2222A Document number: DS31156 Rev. 4 - 2 2 of 6 www.diodes.com December 2014 © Diodes Incorporated DXT2222A Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 8) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Symbol BVCBO BVCEO BVEBO Min 75 40 6.0 Collector Cutoff Current ICBO  Collector Cutoff Current Emitter Cutoff Current Base Cutoff Current ON CHARACTERISTICS (Note 8) ICEX IEBO IBL    DC Current Gain 35 50 75 hFE 100 40 35 50 Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Input Capacitance Current Gain-Bandwidth Product VCE(SAT) VBE(SAT) Cobo Cibo fT   0.6    300 Noise Figure NF  SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time td  tr  ts  tf  Note: 8. Measured under pulsed conditions. Pulse width = 300µs. Duty cycle 2%. Max    10 10 10 20    300    0.3 1.0 1.2 2.0 8 25  4.0 10 25 225 60 Unit Test Conditions V IC = 10µA V IC = 10mA V IE = 10µA nA VCB = 60V A VCB = 60V, TA = +150°C nA VCE = 60V, VEB(OFF) = 3.0V nA VEB = 3.0V nA VCE = 60V, VEB(OFF) = 3.0V IC = 100µA, VCE = 10V IC = 1.0mA, VCE = 10V IC = 10mA, VCE = 10V  IC = 150mA, VCE = 10V IC = 500mA, VCE = 10V IC = 10mA, VCE = 10V, TA = -55°C IC = 150mA, VCE = 1.0V V IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA V IC = 150mA, IB = 15mA IC = 500mA, IB = 50mA pF pF MHz dB VCB = 10V, f = 1.0MHz VEB = 0.5V, f = 1.0MHz VCE = 20V, IC = 20mA, f = 100MHz VCE = 10V, IC = 150µA, RS = 1.0kΩ, f = 1.0kHz ns VCC = 30V, IC = 150mA, ns VEB(off) = 0.5V, IB1 = 15mA ns VCC = 30V, IC = 150mA, ns IB1 = IB2 = 15mA Typical Electrical Characteristics (@TA = +25°C unless otherwise specified.) 0.8 500 IC, COLLECTOR CURRENT (A) hFE, DC CURRENT G AIN 0.7 IB = 10mA 400 TA = 150°C 0.6 IB = 8mA 0.5 IB = 6mA 300 TA = 85°C 0.4 IB = 4mA TA = 25°C 0.3 200 IB = 2mA 0.2 IB = 1mA 100 TA = -55°C 0.1 VCE = 10V 0.0 0 123 4 VCE, COLLECTOR EMITTER VOLTAGE (V) Figure 1 Typical Collector Current vs. Collector Emitter Voltage 5 .


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