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1N5820

Fairchild Semiconductor

3.0 Ampere Schottky Barrier Rectifiers

1N5820-1N5822 1N5820 - 1N5822 Features • 3.0 ampere operation at TA = 95°C with no thermal runaway. • For use in low v...


Fairchild Semiconductor

1N5820

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Description
1N5820-1N5822 1N5820 - 1N5822 Features 3.0 ampere operation at TA = 95°C with no thermal runaway. For use in low voltage, high frequency inverters free wheeling, and polarity protection applications. DO-201AD COLOR BAND DENOTES CATHODE Schottky Rectifiers Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value 1N5820 1N5821 1N5822 VRRM IF(AV) IFSM Tstg TJ Maximum Repetitive Reverse Voltage Average Rectified Forward Current 3/8 " lead length @ TA = 95°C Non-repetitive Peak Forward Surge Current 8.3 ms Single Half-Sine-Wave Storage Temperature Range Operating Junction Temperature 20 30 40 3.0 80 -65 to +125 -65 to +125 *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Units V A A °C °C Thermal Characteristics Symbol PD RθJA Parameter Power Dissipation Thermal Resistance, Junction to Ambient Electrical Characteristics TA = 25°C unless otherwise noted Symbol Parameter VF Forward Voltage @ 3.0 A @ 9.4 A IR Reverse Current @ rated VR TA = 25°C TA = 100°C CT Total Capacitance VR = 4.0 V, f = 1.0 MHz Value 3.6 28 Units W °C/W 1N5820 475 850 Device 1N5821 500 900 0.5 20 190 1N5822 525 950 Units mV mV mA mA pF 2001 Fairchild Semiconductor Corporation 1N5820-1N5822, Rev. C 1N5820-1N5822 Typical Characteristics Schottky Rectifiers (continued) Average Rectified Forward Current, IF [A] 4 3 SINGLE PHASE 2 HALF WAVE 60HZ RESISTIVE OR INDUCTIVE LOAD 1 .375" 9.5 mm LEA...




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