P-Channel Enhancement Mode Power MOSFET
Elektronische Bauelemente
SPR35P03
-35A , -30V , RDS(ON) 27 mΩ P-Channel Enhancement Mode Power MOSFET
RoHS Compliant ...
Description
Elektronische Bauelemente
SPR35P03
-35A , -30V , RDS(ON) 27 mΩ P-Channel Enhancement Mode Power MOSFET
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The SPR35P03 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The PR-8PP package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
PR-8PP
FEATURES
Lower Gate Charge Simple Drive Requirement Fast Switching Characteristic
MARKING
35P03
= Date code
PACKAGE INFORMATION
Package
MPQ
PR-8PP
3K
Leader Size 13 inch
REF.
A B C D E F
Millimeter
Min. Max.
4.9 5.1
5.7 5.9
5.95
6.2
1.27 BSC.
0.35 0.49
0.1 0.2
REF.
G H I J K L
Millimeter Min. Max. 0.8 1.0
0.254 Ref. 4.0 Ref. 3.4 Ref. 0.6 Ref. 1.4 Ref.
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Rating
Drain-Source Voltage
Gate-Source Voltage
TC=25°C
Continuous Drain Current 1@VGS=10V TC=100°C TA=25°C
Pulsed Drain Current 2 Single Pulse Avalanche Energy 3
TA=70°C
VDS VGS
ID
IDM EAS
-30 ±20 -35 -22 -8.5 -6.8 -70 135
Avalanche Current Total Power Dissipation 4
TC=25°C
IAS PD
-30 37.5
Operating Junction & Storage Temperature
TJ, TSTG
-55~150
Thermal Resistance Rating
Thermal Resistance Junction-Ambient1(Max). Thermal Resistance Junction-Case1(Max).
RθJA RθJC
62 3.33
Unit V V A A A A A mJ A W °C
°C / ...
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