DatasheetsPDF.com

SPR40N06 Dataheets PDF



Part Number SPR40N06
Manufacturers SeCoS
Logo SeCoS
Description N-Channel Enhancement Mode Power MOSFET
Datasheet SPR40N06 DatasheetSPR40N06 Datasheet (PDF)

Elektronische Bauelemente SPR40N06 40A , 60V , RDS(ON) 12 mΩ N-Channel Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The SPR40N06 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The PR-8PP package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. .

  SPR40N06   SPR40N06



Document
Elektronische Bauelemente SPR40N06 40A , 60V , RDS(ON) 12 mΩ N-Channel Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The SPR40N06 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The PR-8PP package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. PR-8PP FEATURES Lower Gate Charge Simple Drive Requirement Fast Switching Characteristic MARKING 40N06 = Date code PACKAGE INFORMATION Package MPQ PR-8PP 3K Leader Size 13 inch REF. A B C D E F Millimeter Min. Max. 4.9 5.1 5.7 5.9 5.95 6.2 1.27 BSC. 0.35 0.49 0.1 0.2 REF. G H I J K L Millimeter Min. Max. 0.8 1.0 0.254 Ref. 4.0 Ref. 3.4 Ref. 0.6 Ref. 1.4 Ref. SD SD SD GD ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 1@VGS=10V TC=25°C TC=100°C Pulsed Drain Current 2 TC=25°C Single Pulse Avalanche Energy 3 VDS VGS ID I DM EAS 60 ±20 40 28 110 50 Avalanche Current Total Power Dissipation 4 TC=25°C Operating Junction & Storage Temperature IAS PD TJ, TSTG 30 69 -55~150 Thermal Resistance Rating Thermal Resistance Junction-Ambient1(Max). Thermal Resistance Junction-Case1(Max). RθJA RθJC 36 1.8 Unit V V A A mJ A W °C °C / W °C / W http://www.SeCoSGmbH.com/ 13-Jun-2014 Rev.A Any changes of specification will not be informed individually. Page 1 of 4 Elektronische Bauelemente SPR40N06 40A , 60V , RDS(ON) 12 mΩ N-Channel Enhancement Mode Power MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Teat Conditions Static Drain-Source Breakdown Voltage BVDSS 60 - - V VGS=0, ID= 250uA Gate-Threshold Voltage VGS(th) 2 - 4 V VDS=VGS, ID=250uA Gate-Source Leakage Current IGSS - - ±100 nA VGS= ±20V Drain-Source Leakage Current Static Drain-Source On-Resistance 2 - -1 VDS=60V, VGS=0, TJ=25°C IDSS uA - -5 VDS=60V, VGS=0, TJ=55°C RDS(ON) - - 12 mΩ VGS=10V, ID=20A Gate Resistance Rg - - 3.5 Ω f =1.0MHz Total Gate Charge Gate-Source Charge Gate-Drain Change Turn-on Delay Time 2 Rise Time Turn-off Delay Time Fall Time Qg Qgs Qgd Td(on) Tr Td(off) Tf - 20 - ID=20A - 5 - nC VDS=30V - 1.8 - VGS=10V -6- - 2.5 25 - VDD=30V nS VGS=10V RL=1.5Ω RG=3Ω - 2.5 - Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss - 1543 - VGS =0 Coss - 165 - pF VDS=30V f =1.0MHz Crss - 9 - Guaranteed Avalanche Characteristics Single Pulse Avalanche Energy 5 EAS 22 - - mJ VD=25V, L=0.1mH, IAS=20A Diode Forward Voltage 2 Continuous Source Current 1,6 Pulsed Source Current 2,6 Source-Drain Diode VSD - - 1.3 V IS=20A, VGS=0 IS - - 40 A VD=VG=0, Force Current ISM - - 110 A Reverse Recovery Time Reverse Recovery Charge Trr - 18 - nS .


SPR35P03 SPR40N06 SPR45N10


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)