Document
Elektronische Bauelemente
SPR40N06
40A , 60V , RDS(ON) 12 mΩ N-Channel Enhancement Mode Power MOSFET
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The SPR40N06 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The PR-8PP package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
PR-8PP
FEATURES
Lower Gate Charge Simple Drive Requirement Fast Switching Characteristic
MARKING
40N06
= Date code
PACKAGE INFORMATION
Package
MPQ
PR-8PP
3K
Leader Size 13 inch
REF.
A B C D E F
Millimeter
Min. Max.
4.9 5.1
5.7 5.9
5.95
6.2
1.27 BSC.
0.35 0.49
0.1 0.2
REF.
G H I J K L
Millimeter Min. Max. 0.8 1.0
0.254 Ref. 4.0 Ref. 3.4 Ref. 0.6 Ref. 1.4 Ref.
SD SD SD GD
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Rating
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current 1@VGS=10V TC=25°C TC=100°C
Pulsed Drain Current 2
TC=25°C
Single Pulse Avalanche Energy 3
VDS VGS
ID
I DM EAS
60 ±20 40 28 110 50
Avalanche Current
Total Power Dissipation 4
TC=25°C
Operating Junction & Storage Temperature
IAS PD TJ, TSTG
30 69 -55~150
Thermal Resistance Rating
Thermal Resistance Junction-Ambient1(Max). Thermal Resistance Junction-Case1(Max).
RθJA RθJC
36 1.8
Unit V V
A
A mJ A W °C
°C / W °C / W
http://www.SeCoSGmbH.com/
13-Jun-2014 Rev.A
Any changes of specification will not be informed individually.
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Elektronische Bauelemente
SPR40N06
40A , 60V , RDS(ON) 12 mΩ N-Channel Enhancement Mode Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Teat Conditions
Static
Drain-Source Breakdown Voltage
BVDSS 60 - - V VGS=0, ID= 250uA
Gate-Threshold Voltage
VGS(th)
2 - 4 V VDS=VGS, ID=250uA
Gate-Source Leakage Current
IGSS - - ±100 nA VGS= ±20V
Drain-Source Leakage Current Static Drain-Source On-Resistance 2
- -1
VDS=60V, VGS=0, TJ=25°C
IDSS
uA
- -5
VDS=60V, VGS=0, TJ=55°C
RDS(ON) - - 12 mΩ VGS=10V, ID=20A
Gate Resistance
Rg - - 3.5 Ω f =1.0MHz
Total Gate Charge Gate-Source Charge Gate-Drain Change Turn-on Delay Time 2 Rise Time Turn-off Delay Time Fall Time
Qg Qgs Qgd Td(on) Tr Td(off) Tf
- 20 -
ID=20A
- 5 - nC VDS=30V
- 1.8 -
VGS=10V
-6-
-
2.5 25
-
VDD=30V
nS
VGS=10V RL=1.5Ω
RG=3Ω
- 2.5 -
Input Capacitance Output Capacitance Reverse Transfer Capacitance
Ciss - 1543 -
VGS =0
Coss
- 165 -
pF VDS=30V
f =1.0MHz
Crss - 9 -
Guaranteed Avalanche Characteristics
Single Pulse Avalanche Energy 5
EAS
22 -
- mJ VD=25V, L=0.1mH, IAS=20A
Diode Forward Voltage 2 Continuous Source Current 1,6 Pulsed Source Current 2,6
Source-Drain Diode VSD - - 1.3 V IS=20A, VGS=0 IS - - 40 A
VD=VG=0, Force Current ISM - - 110 A
Reverse Recovery Time Reverse Recovery Charge
Trr - 18 - nS .