SPR40N06 MOSFET Datasheet

SPR40N06 Datasheet, PDF, Equivalent


Part Number

SPR40N06

Description

N-Channel Enhancement Mode Power MOSFET

Manufacture

SeCoS

Total Page 4 Pages
Datasheet
Download SPR40N06 Datasheet


SPR40N06
Elektronische Bauelemente
SPR40N06
40A , 60V , RDS(ON) 12 m
N-Channel Enhancement Mode Power MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The SPR40N06 provide the designer with the best
combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness. The PR-8PP package
is universally preferred for all commercial-industrial surface
mount applications and suited for low voltage applications
such as DC/DC converters.
PR-8PP
FEATURES
Lower Gate Charge
Simple Drive Requirement
Fast Switching Characteristic
MARKING
40N06
= Date code
PACKAGE INFORMATION
Package
MPQ
PR-8PP
3K
Leader Size
13 inch
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
4.9 5.1
5.7 5.9
5.95
6.2
1.27 BSC.
0.35 0.49
0.1 0.2
REF.
G
H
I
J
K
L
Millimeter
Min. Max.
0.8 1.0
0.254 Ref.
4.0 Ref.
3.4 Ref.
0.6 Ref.
1.4 Ref.
SD
SD
SD
GD
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Rating
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current 1@VGS=10V TC=25°C
TC=100°C
Pulsed Drain Current 2
TC=25°C
Single Pulse Avalanche Energy 3
VDS
VGS
ID
I DM
EAS
60
±20
40
28
110
50
Avalanche Current
Total Power Dissipation 4
TC=25°C
Operating Junction & Storage Temperature
IAS
PD
TJ, TSTG
30
69
-55~150
Thermal Resistance Rating
Thermal Resistance Junction-Ambient1(Max).
Thermal Resistance Junction-Case1(Max).
RθJA
RθJC
36
1.8
Unit
V
V
A
A
mJ
A
W
°C
°C / W
°C / W
http://www.SeCoSGmbH.com/
13-Jun-2014 Rev.A
Any changes of specification will not be informed individually.
Page 1 of 4

SPR40N06
Elektronische Bauelemente
SPR40N06
40A , 60V , RDS(ON) 12 m
N-Channel Enhancement Mode Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Teat Conditions
Static
Drain-Source Breakdown Voltage
BVDSS 60 - - V VGS=0, ID= 250uA
Gate-Threshold Voltage
VGS(th)
2 - 4 V VDS=VGS, ID=250uA
Gate-Source Leakage Current
IGSS - - ±100 nA VGS= ±20V
Drain-Source Leakage Current
Static Drain-Source On-Resistance 2
- -1
VDS=60V, VGS=0, TJ=25°C
IDSS
uA
- -5
VDS=60V, VGS=0, TJ=55°C
RDS(ON) - - 12 mVGS=10V, ID=20A
Gate Resistance
Rg - - 3.5 f =1.0MHz
Total Gate Charge
Gate-Source Charge
Gate-Drain Change
Turn-on Delay Time 2
Rise Time
Turn-off Delay Time
Fall Time
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
- 20 -
ID=20A
- 5 - nC VDS=30V
- 1.8 -
VGS=10V
-6-
-
-
2.5
25
-
-
VDD=30V
nS
VGS=10V
RL=1.5
RG=3
- 2.5 -
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss - 1543 -
VGS =0
Coss
- 165 -
pF VDS=30V
f =1.0MHz
Crss - 9 -
Guaranteed Avalanche Characteristics
Single Pulse Avalanche Energy 5
EAS
22 -
- mJ VD=25V, L=0.1mH, IAS=20A
Diode Forward Voltage 2
Continuous Source Current 1,6
Pulsed Source Current 2,6
Source-Drain Diode
VSD - - 1.3 V IS=20A, VGS=0
IS - - 40 A
VD=VG=0, Force Current
ISM - - 110 A
Reverse Recovery Time
Reverse Recovery Charge
Trr - 18 - nS IF=20A, dl/dt=100A/µS,
Qrr - 65 - nC TJ=25°C
Note:
1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper , 10sec , 125/W at steady state
2. The data tested by pulsed , pulse width 300us , duty cycle 2%
3. The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=30A
4. The power dissipation is limited by 150°C juncti on temperature
5. The Min. value is 100% EAS tested guarantee.
6. The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
http://www.SeCoSGmbH.com/
13-Jun-2014 Rev.A
Any changes of specification will not be informed individually.
Page 2 of 4


Features Elektronische Bauelemente SPR40N06 40A , 60V , RDS(ON) 12 mΩ N-Channel Enhan cement Mode Power MOSFET RoHS Complian t Product A suffix of “-C” specifie s halogen & lead-free DESCRIPTION The SPR40N06 provide the designer with the best combination of fast switching, rug gedized device design, low on-resistanc e and cost-effectiveness. The PR-8PP pa ckage is universally preferred for all commercial-industrial surface mount app lications and suited for low voltage ap plications such as DC/DC converters. P R-8PP FEATURES Lower Gate Charge Simpl e Drive Requirement Fast Switching Char acteristic MARKING 40N06 = Date code PACKAGE INFORMATION Package MPQ PR -8PP 3K Leader Size 13 inch REF. A B C D E F Millimeter Min. Max. 4.9 5. 1 5.7 5.9 5.95 6.2 1.27 BSC. 0.35 0.49 0.1 0.2 REF. G H I J K L Millim eter Min. Max. 0.8 1.0 0.254 Ref. 4.0 R ef. 3.4 Ref. 0.6 Ref. 1.4 Ref. SD SD S D GD ABSOLUTE MAXIMUM RATINGS (TA=25° C unless otherwise specified) Parameter Symbol Rating Drain-Source.
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