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SPR50N03

SeCoS

N-Channel Enhancement Mode Power MOSFET

Elektronische Bauelemente SPR50N03 51A , 30V , RDS(ON) 9 mΩ N-Channel Enhancement Mode Power MOSFET RoHS Compliant Pro...


SeCoS

SPR50N03

File Download Download SPR50N03 Datasheet


Description
Elektronische Bauelemente SPR50N03 51A , 30V , RDS(ON) 9 mΩ N-Channel Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The SPR50N03 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The PR-8PP package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. PR-8PP FEATURES Lower Gate Charge Simple Drive Requirement Fast Switching Characteristic MARKING 50N03 = Date code PACKAGE INFORMATION Package MPQ PR-8PP 3K Leader Size 13 inch REF. A B C D E F Millimeter Min. Max. 4.9 5.1 5.7 5.9 5.95 6.2 1.27 BSC. 0.35 0.49 0.1 0.2 REF. G H I J K L Millimeter Min. Max. 0.8 1.0 0.254 Ref. 4.0 Ref. 3.4 Ref. 0.6 Ref. 1.4 Ref. SD SD SD GD ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Rating Drain-Source Voltage Gate-Source Voltage TC=25°C Continuous Drain Current 1@VGS=10V TC=100°C TA=25°C Pulsed Drain Current 2 Single Pulse Avalanche Energy 3 TA=70°C VDS VGS ID IDM EAS 30 ±20 51 36 12 9.6 130 130 Avalanche Current Power Dissipation 4 TC=25°C IAS PD 34 46 Operating Junction & Storage Temperature TJ, TSTG -55~150 Thermal Resistance Rating Thermal Resistance Junction-Ambient1(Max). Thermal Resistance Junction-Case1(Max). RθJA RθJC 62 2.7 Unit V V A A A A A mJ A W °C °C / W °C / W http...




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