Document
Elektronische Bauelemente
SPR80N03
80A , 30V , RDS(ON) 5.5 mΩ N-Channel Enhancement Mode Power MOSFET
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The SPR80N03 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The PR-8PP package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
PR-8PP
FEATURES
Lower Gate Charge Simple Drive Requirement Fast Switching Characteristic
MARKING
80N03
= Date code
PACKAGE INFORMATION
Package
MPQ
PR-8PP
3K
Leader Size 13 inch
REF.
A B C D E F
Millimeter Min. Max. 4.9 5.1 5.7 5.9 5.95 6.2
1.27 BSC. 0.35 0.49 0.1 0.2
REF.
G H I J K L
Millimeter Min. Max. 0.8 1.0
0.254 Ref. 4.0 Ref. 3.4 Ref. 0.6 Ref. 1.4 Ref.
SD SD SD GD
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Rating
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current 1@VGS=10V TC=25°C TC=100°C
Pulsed Drain Current 2
TC=25°C
Single Pulse Avalanche Energy 3
VDS VGS
ID
I DM EAS
30 ±20 80 50 160 252
Avalanche Current
Power Dissipation 4
TC=25°C
Operating Junction & Storage Temperature
IAS PD TJ, TSTG
48 53 -55~150
Thermal Resistance Rating
Thermal Resistance Junction-Ambient1(Max). Thermal Resistance Junction-Case1(Max).
RθJA RθJC
62 2.36
Unit V V
A
A mJ A W °C
°C / W °C / W
http://www.SeCoSGmbH.com/
16-May-2014 Rev.A
Any changes of specification will not be informed individually.
Page 1 of 4
Elektronische Bauelemente
SPR80N03
80A , 30V , RDS(ON) 5.5 mΩ N-Channel Enhancement Mode Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Teat Conditions
Static
Drain-Source Breakdown Voltage
BVDSS 30 - - V VGS=0, ID= 250µA
Gate-Threshold Voltage
VGS(th)
1 - 2.5 V VDS=VGS, ID=250µA
Forward Tranconductance
gfs
- 43 -
S VDS=5V, ID=30A
Gate-Source Leakage Current
IGSS - - ±100 nA VGS= ±20V
Drain-Source Leakage Current
- -1
VDS=24V, VGS=0, TJ=25°C
IDSS
µA
- -5
VDS=24V, VGS=0, TJ=55°C
Static Drain-Source On-Resistance 2
- - 5.5
VGS=10V, ID=30A
RDS(ON)
mΩ
- -8
VGS=4.5V, ID=15A
Gate Resistance
Rg
-
1.7 2.9
Ω f =1.0MHz
Total Gate Charge Gate-Source Charge Gate-Drain (“Miller”) Change Turn-on Delay Time 2 Rise Time Turn-off Delay Time Fall Time
Qg Qgs Qgd Td(on) Tr Td(off) Tf
- 20 - 7.6 - 7.2 - 7.8 - 15 - 37.3 - 10.6 -
ID=15A nC VDS=15V
VGS=4.5V
VDD=15V
nS
ID=15A VGS=10V
RG=3.3Ω
Input Capacitance Output Capacitance Reverse Transfer Capacitance
Ciss - 2295 -
VGS =0
Coss
- 267 -
pF VDS=15V
Crss - 210 -
f =1.0MHz
Guaranteed Avalanche Characteristics
Single Pulse Avalanche Energy 5
EAS
63 -
- mJ VDD=25V, L=0.1mH, IAS=24A
Diode Forward Voltage 2 Continuous Source Current 1,6 Pulsed Source Current 2,6
Source-Drain Diode
VSD - - 1 V IS=1A, VGS=0V
IS - - 80 A VG=VD=0, Force Current
ISM - - 160 A
Reverse Recovery Time Reverse Recovery Charge
Trr - 14 - nS IF=30A, dl/dt=100A/µS, Qrr - 5 - nC TJ=25°C
Note: 1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper , ≦10sec , 125℃/W at steady state 2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3. The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=48A 4. The power dissipation is limited by 150°C juncti on temperature 5. The Min. value is 100% EAS tested guarantee. 6. The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
http://www.SeCoSGmbH.com/
16-May-2014 Rev.A
Any changes of specification will not be informed individually.
Page 2 of 4
Elektronische Bauelemente CHARACTERISTIC CURVES
SPR80N03
80A , 30V , RDS(ON) 5.5 mΩ N-Channel Enhancement Mode Power MOSFET
http://www.SeCoSGmbH.com/
16-May-2014 Rev.A
Any changes of specification will not be informed individually.
Page 3 of 4
Elektronische Bauelemente CHARACTERISTIC CURVES
SPR80N03
80A , 30V , RDS(ON) 5.5 mΩ N-Channel Enhancement Mode Power MOSFET
http://www.SeCoSGmbH.com/
16-May-2014 Rev.A
Any changes of specification will not be informed individually.
Page 4 of 4
.