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SPR80N03 Dataheets PDF



Part Number SPR80N03
Manufacturers SeCoS
Logo SeCoS
Description N-Channel Enhancement Mode Power MOSFET
Datasheet SPR80N03 DatasheetSPR80N03 Datasheet (PDF)

Elektronische Bauelemente SPR80N03 80A , 30V , RDS(ON) 5.5 mΩ N-Channel Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The SPR80N03 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The PR-8PP package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters..

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Elektronische Bauelemente SPR80N03 80A , 30V , RDS(ON) 5.5 mΩ N-Channel Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The SPR80N03 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The PR-8PP package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. PR-8PP FEATURES Lower Gate Charge Simple Drive Requirement Fast Switching Characteristic MARKING 80N03 = Date code PACKAGE INFORMATION Package MPQ PR-8PP 3K Leader Size 13 inch REF. A B C D E F Millimeter Min. Max. 4.9 5.1 5.7 5.9 5.95 6.2 1.27 BSC. 0.35 0.49 0.1 0.2 REF. G H I J K L Millimeter Min. Max. 0.8 1.0 0.254 Ref. 4.0 Ref. 3.4 Ref. 0.6 Ref. 1.4 Ref. SD SD SD GD ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 1@VGS=10V TC=25°C TC=100°C Pulsed Drain Current 2 TC=25°C Single Pulse Avalanche Energy 3 VDS VGS ID I DM EAS 30 ±20 80 50 160 252 Avalanche Current Power Dissipation 4 TC=25°C Operating Junction & Storage Temperature IAS PD TJ, TSTG 48 53 -55~150 Thermal Resistance Rating Thermal Resistance Junction-Ambient1(Max). Thermal Resistance Junction-Case1(Max). RθJA RθJC 62 2.36 Unit V V A A mJ A W °C °C / W °C / W http://www.SeCoSGmbH.com/ 16-May-2014 Rev.A Any changes of specification will not be informed individually. Page 1 of 4 Elektronische Bauelemente SPR80N03 80A , 30V , RDS(ON) 5.5 mΩ N-Channel Enhancement Mode Power MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Teat Conditions Static Drain-Source Breakdown Voltage BVDSS 30 - - V VGS=0, ID= 250µA Gate-Threshold Voltage VGS(th) 1 - 2.5 V VDS=VGS, ID=250µA Forward Tranconductance gfs - 43 - S VDS=5V, ID=30A Gate-Source Leakage Current IGSS - - ±100 nA VGS= ±20V Drain-Source Leakage Current - -1 VDS=24V, VGS=0, TJ=25°C IDSS µA - -5 VDS=24V, VGS=0, TJ=55°C Static Drain-Source On-Resistance 2 - - 5.5 VGS=10V, ID=30A RDS(ON) mΩ - -8 VGS=4.5V, ID=15A Gate Resistance Rg - 1.7 2.9 Ω f =1.0MHz Total Gate Charge Gate-Source Charge Gate-Drain (“Miller”) Change Turn-on Delay Time 2 Rise Time Turn-off Delay Time Fall Time Qg Qgs Qgd Td(on) Tr Td(off) Tf - 20 - 7.6 - 7.2 - 7.8 - 15 - 37.3 - 10.6 - ID=15A nC VDS=15V VGS=4.5V VDD=15V nS ID=15A VGS=10V RG=3.3Ω Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss - 2295 - VGS =0 Coss - 267 - pF VDS=15V Crss - 210 - f =1.0MHz Guaranteed Avalanche Characteristics Single Pulse Avalanche Energy 5 EAS 63 - - mJ VDD=25V, L=0.1mH, IAS=24A Diode Forward Voltage 2 Continuous Source Current 1,6 Pulsed Source Current 2,6 Source-Drain Diode VSD - - 1 V IS=1A, VGS=0V IS - - 80 A VG=VD=0, Force Current ISM - - 160 A Reverse Recovery Time Reverse Recovery Charge Trr - 14 - nS IF=30A, dl/dt=100A/µS, Qrr - 5 - nC TJ=25°C Note: 1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper , ≦10sec , 125℃/W at steady state 2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3. The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=48A 4. The power dissipation is limited by 150°C juncti on temperature 5. The Min. value is 100% EAS tested guarantee. 6. The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. http://www.SeCoSGmbH.com/ 16-May-2014 Rev.A Any changes of specification will not be informed individually. Page 2 of 4 Elektronische Bauelemente CHARACTERISTIC CURVES SPR80N03 80A , 30V , RDS(ON) 5.5 mΩ N-Channel Enhancement Mode Power MOSFET http://www.SeCoSGmbH.com/ 16-May-2014 Rev.A Any changes of specification will not be informed individually. Page 3 of 4 Elektronische Bauelemente CHARACTERISTIC CURVES SPR80N03 80A , 30V , RDS(ON) 5.5 mΩ N-Channel Enhancement Mode Power MOSFET http://www.SeCoSGmbH.com/ 16-May-2014 Rev.A Any changes of specification will not be informed individually. Page 4 of 4 .


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