BARRIER RECTIFIERS. 1N5821 Datasheet 


MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by 1N5820/D
™Designer's Data Sheet
Axial Lead Rectifiers
. . . employing the Schottky Barrier principle in a large area metal–to–silicon
power diode. State–of–the–art geometry features chrome barrier metal,
epitaxial construction with oxide passivation and metal overlap contact. Ideally
suited for use as rectifiers in low–voltage, high–frequency inverters, free
wheeling diodes, and polarity protection diodes.
1N5820
1N5821
1N5822
1N5820 and 1N5822 are
Motorola Preferred Devices
• Extremely Low vF
• Low Power Loss/High Efficiency
• Low Stored Charge, Majority Carrier Conduction
Mechanical Characteristics:
• Case: Epoxy, Molded
• Weight: 1.1 gram (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal Leads are
Readily Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes: 220°C
Max. for 10 Seconds, 1/16″ from case
• Shipped in plastic bags, 5,000 per bag
• Available Tape and Reeled, 1500 per reel, by adding a “RL’’ suffix to the
part number
• Polarity: Cathode indicated by Polarity Band
• Marking: 1N5820, 1N5821, 1N5822
MAXIMUM RATINGS
SCHOTTKY BARRIER
RECTIFIERS
3.0 AMPERES
20, 30, 40 VOLTS
CASE 267–03
PLASTIC
Rating
Symbol 1N5820 1N5821 1N5822
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Non–Repetitive Peak Reverse Voltage
RMS Reverse Voltage
vAverage Rectified Forward Current (2)
VR(equiv) 0.2 VR(dc), TL = 95°C
(RθJA = 28°C/W, P.C. Board Mounting, see Note 2)
Ambient Temperature
Rated VR(dc), PF(AV) = 0
RθJA = 28°C/W
Non–Repetitive Peak Surge Current
(Surge applied at rated load conditions, half wave, single phase
60 Hz, TL = 75°C)
Operating and Storage Junction Temperature Range
(Reverse Voltage applied)
VRRM
20
30
40
VRWM
VR
VRSM
24
36
48
VR(RMS)
14
21
28
IO 3.0
TA 90 85 80
IFSM
TJ, Tstg
80 (for one cycle)
*65 to +125
V
V
V
A
°C
A
°C
Peak Operating Junction Temperature (Forward Current applied)
TJ(pk)
150
°C
*THERMAL CHARACTERISTICS (Note 2)
Characteristic
Thermal Resistance, Junction to Ambient
(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2.0%.
(2) Lead Temperature reference is cathode lead 1/32″ from case.
* Indicates JEDEC Registered Data for 1N5820–22.
Symbol
RθJA
Max
28
Unit
°C/W
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred devices are Motorola recommended choices for future use and best overall value.
Rev 2
©RMeoctotriofilea,rInDce. 1v9ic96e Data
1

1N5820 1N5821 1N5822
*ELECTRICAL CHARACTERISTICS (TL = 25°C unless otherwise noted) (2)
Characteristic
Symbol
Maximum Instantaneous Forward Voltage (1)
(iF = 1.0 Amp)
(iF = 3.0 Amp)
(iF = 9.4 Amp)
VF
Maximum Instantaneous Reverse Current @ Rated dc Voltage (1)
TL = 25°C
TL = 100°C
(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2.0%.
(2) Lead Temperature reference is cathode lead 1/32″ from case.
* Indicates JEDEC Registered Data for 1N5820–22.
iR
1N5820 1N5821 1N5822
0.370
0.475
0.850
0.380
0.500
0.900
0.390
0.525
0.950
2.0 2.0 2.0
20 20 20
Unit
V
mA
NOTE 1 — DETERMINING MAXIMUM RATINGS
Reverse power dissipation and the possibility of thermal runaway
must be considered when operating this rectifier at reverse voltages
above 0.1 VRWM. Proper derating may be accomplished by use of
equation (1).
* *TA(max) = TJ(max) RθJAPF(AV) RθJAPR(AV) (1)
where TA(max) = Maximum allowable ambient temperature
TJ(max) = Maximum allowable junction temperature
(125°C or the temperature at which thermal
runaway occurs, whichever is lowest)
PF(AV) = Average forward power dissipation
PR(AV) = Average reverse power dissipation
RθJA = Junction–to–ambient thermal resistance
Figures 1, 2, and 3 permit easier use of equation (1) by taking
reverse power dissipation and thermal runaway into consideration.
The figures solve for a reference temperature as determined by
equation (2).
*TR = TJ(max) RθJAPR(AV)
(2)
Substituting equation (2) into equation (1) yields:
*TA(max) = TR RθJAPF(AV)
(3)
Inspection of equations (2) and (3) reveals that TR is the ambient
temperature at which thermal runaway occurs or where TJ = 125°C,
when forward power is zero. The transition from one boundary condi
tion to the other is evident on the curves of Figures 1, 2, and 3 as a
difference in the rate of change of the slope in the vicinity of 115°C.
The data of Figures 1, 2, and 3 is based upon dc conditions. For use
in common rectifier circuits, Table 1 indicates suggested factors for
an equivalent dc voltage to use for conservative design, that is:
VR(equiv) = V(FM) F
(4)
The factor F is derived by considering the properties of the various
rectifier circuits and the reverse characteristics of Schottky diodes.
EXAMPLE: Find TA(max) for 1N5821 operated in a 12–volt dc sup
ply using a bridge circuit with capacitive filter such that IDC = 2.0 A
(IF(AV) = 1.0 A), I(FM)/I(AV) = 10, Input Voltage = 10 V(rms), RθJA =
40°C/W.
NStep 1. Find VR(equiv). Read F = 0.65 from Table 1,
VR(equiv) = (1.41) (10) (0.65) = 9.2 V.
Step 2. Find TR from Figure 2. Read TR = 108°C
@ VR = 9.2 V and RθJA = 40°C/W.
Step 3. Find PF(AV) from Figure 6. **Read PF(AV) = 0.85 W
+ +@
I(FM)
I(AV)
10 and IF(AV)
1.0 A.
*Step 4. Find TA(max) from equation (3).
TA(max) = 108 (0.85) (40) = 74°C.
**Values given are for the 1N5821. Power is slightly lower for the
1N5820 because of its lower forward voltage, and higher for the
1N5822. Variations will be similar for the MBR–prefix devices, using
PF(AV) from Figure 7.
Table 1. Values for Factor F
Circuit
Half Wave
Full Wave, Bridge
Load
Resistive Capacitive* Resistive Capacitive
Sine Wave
0.5
1.3
0.5 0.65
Square Wave
0.75
1.5
0.75 0.75
[*Note that VR(PK) 2.0 Vin(PK). †Use line to center tap voltage for Vin.
Full Wave,
Center Tapped*†
Resistive Capacitive
1.0 1.3
1.5 1.5
2 Rectifier Device Data

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