1N5821

MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by 1N5820/D Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage, high–frequency inverters, free wheeling diodes, and polarity protection diodes. Extremely Low vF Low Power Loss/High Efficiency Low Stored Charge, Majority Carrier Conduction Mechanical Characteristics: Case: Epoxy, Molded Weight: 1.1 gram (approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 220°C Max. for 10 Seconds, 1/16″ from case Shipped in plastic bags, 5,000 per bag Available Tape and Reeled, 1500 per reel, by adding a “RL’’ suffix to the part number Polarity: Cathode indicated by Polarity Band Marking: 1N5820, 1N5821, 1N5822 MAXIMUM RATINGS Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Non–Repetitive Peak Reverse Voltage RMS Reverse Voltage Average Rectified Forward Current (2) VR(equiv) 0.2 VR(dc), TL = 95°C (RθJA = 28°C/W, P.C. Board Mounting, see Note 2) Symbol VRRM VRWM VR VRSM VR(RMS) IO 1N5820 20 1N5821 30 ™ Data Sheet 1N5820 1N5821 1N5822 1N5820 and 1N5822 are Motorola Preferred Devices SCHOTTKY BARRIER REC...