RT3DSSM

PRELIMINARY Notice：This is not a final specification Some parametric are subject to change. 〈SMALL-SIGNAL DIODE〉 RT3DSSM FOR HIGH SPEED SWITCHING APPLICATION SILICON EPITAXIAL TYPE(SERIES TYPE) DESCRIPTION RT3DSSM is a super mini package plastic seal type silicon epitaxial type composite diode, built with two Series type MC2840. Quadruple and small pin capacitance (4 pieces), suitable for protect circuit, bias circuit. OUTLINEDRAWING Unit：ｍｍ FEATURE ●Small pin capacitance ●Quadruple diodes and super mini package for mounting APPLICATION For general high speed switching of audio machine,VTR. Equivalent circuit MC2840 Di2 Di1 JEITA：SC-88 JEDEC：－ Di1 Di2 MC2840 MAXIMUM RATINGS（Ta=25℃）（Di1,Di2 COMMON） Symbol Parameter Ratings Unit VRM Peak reverse voltage 35 V VR DC reverse voltage 30 V I FSM Surge current（1μs） 4A I FM Peak forward current 300 mA I O Average rectification current 100 mA PT Total allowance dissipation 200 mW Tｊ Junction temperature ＋150 ℃ Tstg Storage temperature -55～＋150 ℃ MARKING ⑥ ⑤ ④ DSS ● Type Name ①②③ ELECTRICAL CHARACTERISTICS（Ta=25℃）（Di1,Di2 COMMON） Parameter Symbol Test conditions Forward voltage Reverse current Pin capacitance VF1 I F=10mA VF2 I F=50mA VF3 I F=100mA IR VR=30V Cｔ VR=0V，f=1MHz Limits Min Typ Max Uniit - 0.75 1.0 - 085 1.2 V - 0.90 1.4 - - 0.1 μA Di1 - 6 pF Di2 - 10 - ISAHAYA ELECTRONICS CORPORATION PRELIMINARY Notice：This is not a final specification Some parametric are subject to change. MC...