RT3DAAM

PRELIMINARY Notice：This is not a final specification Some parametric are subject to change. 〈SMALL-SIGNAL DIODE〉 RT3DAAM FOR HIGH SPEED SWITCHING APPLICATION SILICON EPITAXIAL TYPE(ANODE COMMON) DESCRIPTION RT3DAAM is a super mini package plastic seal type silicon epitaxial type composite diode, built with two Anode common MC2836. Due to the small pin capacitance, short switching time(reverse recovery time),It is most suitable for high speed switching application and limitter,clipper application. OUTLINEDRAWING Unit：ｍｍ FEATURE ●Small pin capacitance ●Quick switching time ●High voltage ●Quadruple diodes and super mini package for mounting APPLICATION For general high speed switching of audio machine,VTR. Equivalent circuit MC2836 JEITA：SC-88 JEDEC：－ MC2836 MAXIMUM RATINGS（Ta=25℃）（All Di COMMON） Symbol Parameter Ratings Unit VRM Peak reverse voltage 85 V VR DC reverse voltage 80 V I FSM Surge current（1μs） 4A I FM Peak forward current 300 mA I O Average rectification current 100 mA PT Total allowance dissipation 200 mW Tｊ Junction temperature ＋150 ℃ Tstg Storage temperature -55～＋150 ℃ MARKING ⑥ ⑤ ④ DAA ● Type Name ①②③ ELECTRICAL CHARACTERISTICS（Ta=25℃）（All Di COMMON） Parameter Symbol Test conditions Forward voltage Reverse current Pin capacitance Reverse recovery time VF1 I F=10mA VF2 I F=50mA VF3 I F=100mA IR1 VR=75V IR2 VR=80V Cｔ VR=0V，f=1MHz trr (Refer to test circuit) Limits Min Typ Max - 0.77 0.9 - 090 1.0 - 0.95 1.2 - - 0.1 - - 0.5 -...