BARRIER RECTIFIER. 1N5821 Datasheet

1N5821 RECTIFIER. Datasheet pdf. Equivalent

Part 1N5821
Description SCHOTTKY BARRIER RECTIFIER
Feature RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION 1N5820 THRU 1N5822 SCHOTTKY BARRIER RECTIFIER VOLTAG.
Manufacture Rectron Semiconductor
Datasheet
Download 1N5821 Datasheet

1N5820-1N5822 1N5820 - 1N5822 Features • 3.0 ampere operat 1N5821 Datasheet
MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order thi 1N5821 Datasheet
MCC Features • • • • Low Switching Noise Low Forward Voltage 1N5821 Datasheet
1N5820 THRU 1N5822 SCHOTTKY BARRIER RECTIFIER Reverse Voltag 1N5821 Datasheet
1N5820 3.0 AMP SCHOTTKY BARRIER RECTIFIERS THRU 1N5822 VO 1N5821 Datasheet
RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION 1N5820 THRU 1 1N5821 Datasheet
1N5820 - 1N5822 PRV : 20 - 40 Volts IO : 3.0 Ampere FEATURES 1N5821 Datasheet
SHANGHAI SUNRISE ELECTRONICS CO., LTD. 1N5820 THRU 1N5822 SC 1N5821 Datasheet
1N5821 Datasheet
1N 5820 … 1N 5822 Schottky Barrier Rectifiers Schottky-Barri 1N5821 Datasheet
Recommendation Recommendation Datasheet 1N5821 Datasheet




1N5821
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
SCHOTTKY BARRIER RECTIFIER
VOLTAGE RANGE 20 to 40 Volts CURRENT 3.0 Amperes
1N5820
THRU
1N5822
FEATURES
* Low switching noise
* Low forward voltage drop
* High current capability
* High switching capabitity
* High surge capability
* High reliability
DO-201AD
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: Device has UL flammability classification 94V-O
* Lead: MIL-STD-202E method 208C guaranteed
* Mounting position: Any
* Weight: 1.18 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
1.0 (25.4)
MIN.
.052 (1.3)
.048 (1.2)
DIA.
.375 (9.5)
.335 (8.5)
1.0 (25.4)
MIN.
.220 (5.6)
DIA.
.197 (5.0)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (At TA = 25oC unless otherwise noted)
RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
.375” (9.5mm) lead length at TL = 95oC
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 3)
Storage and Operating Temperature Range
SYMBOL
VRRM
VRMS
VDC
IO
IFSM
RθJA
CJ
TJ, TSTG
1N5820
20
14
20
1N5821
30
21
30
3.0
80
28
250
-65 to + 125
ELECTRICAL CHARACTERISTICS (At TA = 25oC unless otherwise noted)
CHARACTERISTICS
Maximum Instantaneous Forward Voltage at 3.0A DC (Note 1)
Maximum Instantaneous Forward Voltage at 9.4A DC (Note 1)
Maximum Average Reverse Current at
Rated DC Blocking Voltage (Note 1)
@TA = 25oC
@TA = 100oC
SYMBOL
VF
VF
IR
1N5820
.475
.850
NOTES : 1. Measured at Pulse Width 300 uS, Duty 2%.
2. Thermal Resistance (Junction to Ambient): Vertical PC Board Mounting, 0.5” (12.7mm) Lead Length.
3. Measured at 1 MHz and applied reverse voltage of 4.0 volts.
1N5821
.500
.900
2.0
20
1N5822
40
28
40
1N5822
.525
.950
UNITS
Volts
Volts
Volts
Amps
Amps
0C/ W
pF
0C
UNITS
Volts
Volts
mAmps
2001-6



1N5821
RATING AND CHARACTERISTIC CURVES ( 1N5820 THRU 1N5822 )
FIG. 1 - TYPICAL FORWARD CURRENT DERATING CURVE
4
3
2
Single Phase
Half Wave 60Hz
1 Resistive or
Inductive Load
0.375" (9.5mm) Lead Length
0
0 20 40 60 80
100 120 140
LEAD TEMPERATURE, ( )
FIG. 3 - MAXIMUM NON-REPETITIVE
FORWARD SURGE CURRENT
80
70
TL = 75
60 8.3ms Single Half Sine-Wave
(JEDEC Method)
50
40
30
20
10
12
5 10 20
50 100
NUMBER OF CYCLE AT 60Hz
1000
800
600
400
200
100
80
60
FIG. 4 - TYPICAL JUNCTION CAPACITANCE
TJ = 25
20
10
.1
.4 1.0
4 10
REVERSE VOLTAGE, ( V )
40
FIG. 2 - TYPICAL REVERSE CHARACTERISTICS
10
TJ = 125
1.0
TJ = 75
.1
TJ = 25
.01
.001
0
1N5820
1N5821~1N5822
20 40 60 80 100 120 140
PERCENT OF RATED PEAK
REVERSE VOLTAGE, (%)
FIG. 5 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
20
10
TJ = 25
1.0
Pulse Width = 300uS
1% Duty Cycle
1N5820
1N5821
1N5822
.1
.2 .3 .4 .5 .6 .7 .8 .9
INSTANTANEOUS FORWARD VOLTAGE, (V)
RECTRON





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