BARRIER RECTIFIER. 1N5821 Datasheet

1N5821 RECTIFIER. Datasheet pdf. Equivalent

Part 1N5821
Description SCHOTTKY BARRIER RECTIFIER
Feature SHANGHAI SUNRISE ELECTRONICS CO., LTD. 1N5820 THRU 1N5822 SCHOTTKY BARRIER RECTIFIER VOLTAGE: 20 TO .
Manufacture Shanghai Sunrise Electronics
Datasheet
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1N5821
SHANGHAI SUNRISE ELECTRONICS CO., LTD.
1N5820 THRU 1N5822
SCHOTTKY BARRIER
RECTIFIER
TECHNICAL
SPECIFICATION
VOLTAGE: 20 TO 40V CURRENT: 3.0A
FEATURES
• Epitaxial construction for chip
• High current capability
• Low forward voltage drop
• Low power loss, high efficiency
• High surge capability
• High temperature soldering guaranteed:
250oC/10sec/0.375"(9.5mm) lead length
at 5 lbs tension
DO - 201AD
MECHANICAL DATA
• Terminal: Plated axial leads solderable per
MIL-STD 202E, method 208C
• Case: Molded with UL-94 Class V-O
recognized flame retardant epoxy
• Polarity: Color band denotes cathode
• Mounting position: Any
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Single-phase, half-wave, 60Hz, resistive or inductive load rating at 25oC, unless otherwise stated, for capacitive load,
derate current by 20%)
RATINGS
SYMBOL 1N5820 1N5821 1N5822 UNITS
Maximum Repetitive Peak Reverse Voltage
VRRM
20
30
40 V
Maximum RMS Voltage
VRMS
14
21
28 V
Maximum DC Blocking Voltage
VDC 20 30 40 V
Maximum Average Forward Rectified Current
(9.5mm lead length, at TL=95oC)
Peak Forward Surge Current (8.3ms single
half sine-wave superimposed on rated load)
IF(AV)
IFSM
3.0 A
80 A
Maximum Forward Voltage (at 3.0A DC)
Maximum DC Reverse Current
(at rated DC blocking voltage)
Ta=25oC
Ta=100oC
Typical Junction Capacitance
(Note 1)
Typical Thermal Resistance
(Note 2)
Storage and Operation Junction Temperature
VF
IR
CJ
Rθ(ja)
TSTG,TJ
0.475
0.5
2.0
10.0
250
40
-65 to +125
0.525
V
mA
mA
pF
oC/W
oC
Note:
1.Measured at 1.0 MHz and applied reverse voltage of 4.0Vdc
2.Thermal resistance from junction to ambient at 0.375" (9.5mm) lead length, vertical P.C. board mounted
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