DatasheetsPDF.com

1N5821S

EIC discrete Semiconductors

SCHOTTKY BARRIER RECTIFIER DIODES

1N5820S - 1N5822S PRV : 20 - 40 Volts IO : 3.0 Ampere FEATURES : * * * * * * * High current capability High surge curren...


EIC discrete Semiconductors

1N5821S

File Download Download 1N5821S Datasheet


Description
1N5820S - 1N5822S PRV : 20 - 40 Volts IO : 3.0 Ampere FEATURES : * * * * * * * High current capability High surge current capability High reliability High efficiency Low power loss Low cost Low forward voltage drop SCHOTTKY BARRIER RECTIFIER DIODES D2A 0.161 (4.1) 0.154 (3.9) 1.00 (25.4) MIN. 0.284 (7.2) 0.268 (6.8) MECHANICAL DATA : * Case : D2A Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.645 gram 0.040 (1.02) 0.0385 (0.98) 1.00 (25.4) MIN. Dimensions in inches and ( millimeters ) Rating at 25 ° C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATING Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current 0.375", 9.5mm Lead Length at TL = 95 ° C Peak Forward Surge Current, 8.3ms single half sine wave Superimposed on rated load (JEDEC Method) TL = 75° C Maximum Forward Voltage at IF = 3.0 Amp. Maximum Reverse Current at Rated DC Blocking Voltage (Note 1) Typical Thermal Resistance (Note 2) Junction Temperature Range Storage Temperature Range (Note 1) SYMBOL VRRM VRMS VDC IF(AV) 1N5820S 20 14 20 1N5821S 30 21 30 3.0 1N5822S 40 28 40 UNIT Volts Volts Volts Amps. IFSM VF IR IR(H) RθJL TJ TS...




Similar Datasheet




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)