Barrier Rectifiers. 1N5822 Datasheet

1N5822 Rectifiers. Datasheet pdf. Equivalent

Part 1N5822
Description 3.0 Ampere Schottky Barrier Rectifiers
Feature 1N5820-1N5822 1N5820 - 1N5822 Features • 3.0 ampere operation at TA = 95°C with no thermal runaway.
Manufacture Fairchild Semiconductor
Datasheet
Download 1N5822 Datasheet

• 1N5822 AVAILABLE IN JAN, JANTX, JANTXV AND JANS PER MIL-PR 1N5822 Datasheet
1N5820-1N5822 1N5820 - 1N5822 Features • 3.0 ampere operat 1N5822 Datasheet
MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order thi 1N5822 Datasheet
MCC Features • • • • Low Switching Noise Low Forward Voltage 1N5822 Datasheet
1N5820 THRU 1N5822 SCHOTTKY BARRIER RECTIFIER Reverse Voltag 1N5822 Datasheet
1N5820 3.0 AMP SCHOTTKY BARRIER RECTIFIERS THRU 1N5822 VO 1N5822 Datasheet
RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION 1N5820 THRU 1 1N5822 Datasheet
1N5820 - 1N5822 PRV : 20 - 40 Volts IO : 3.0 Ampere FEATURES 1N5822 Datasheet
SHANGHAI SUNRISE ELECTRONICS CO., LTD. 1N5820 THRU 1N5822 SC 1N5822 Datasheet
1N5822 Datasheet
Recommendation Recommendation Datasheet 1N5822 Datasheet




1N5822
1N5820 - 1N5822
Features
3.0 ampere operation at TA = 95°C
with no thermal runaway.
For use in low voltage, high
frequency inverters free
wheeling, and polarity
protection applications.
DO-201AD
COLOR BAND DENOTES CATHODE
Schottky Rectifiers
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
1N5820 1N5821 1N5822
VRRM
IF(AV)
IFSM
Tstg
TJ
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
3/8 " lead length @ TA = 95°C
Non-repetitive Peak Forward Surge Current
8.3 ms Single Half-Sine-Wave
Storage Temperature Range
Operating Junction Temperature
20 30 40
3.0
80
-65 to +125
-65 to +125
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Units
V
A
A
°C
°C
Thermal Characteristics
Symbol
PD
RθJA
Parameter
Power Dissipation
Thermal Resistance, Junction to Ambient
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
Parameter
VF Forward Voltage
@ 3.0 A
@ 9.4 A
IR Reverse Current @ rated VR TA = 25°C
TA = 100°C
CT Total Capacitance
VR = 4.0 V, f = 1.0 MHz
Value
3.6
28
Units
W
°C/W
1N5820
475
850
Device
1N5821
500
900
0.5
20
190
1N5822
525
950
Units
mV
mV
mA
mA
pF
2001 Fairchild Semiconductor Corporation
1N5820-1N5822, Rev. C



1N5822
Typical Characteristics
Schottky Rectifiers
(continued)
4
3
SINGLE PHASE
2 HALF WAVE
60HZ
RESISTIVE OR
INDUCTIVE LOAD
1 .375" 9.5 mm LEAD
LENGTHS
0
0 20 40 60 80 100 120 140
Lead Temperature [ºC]
Figure 1. Forward Current Derating Curve
20
TJ = 25ºC
10 Pulse Width = 200µS
1N5820
1N5821
1
1N5822
0.1
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
Forward Voltage, VF [V]
Figure 2. Forward Voltage Characteristics
80
70
8.3ms Single Half Sine-Wave
JEDEC Method
60
50
40
30
20
10
12
5 10 20
50 100
Number of Cycles at 60Hz
Figure 3. Non-Repetitive Surge Current
100
1N5820
10
1
0.1
1N5821
T J = 125ºC
1N5822
T J = 75ºC
T J = 25ºC
0.01
5
10 15 20 25 30 35
Reverse Voltage, VR [V]
40
Figure 4. Reverse Current vs Reverse Voltage
1000
800
600
400
200
100
80
60
40
20
10
0.1
0.4 1
4 10
40
Reverse Voltage, VR [V]
Figure 5. Total Capacitance
100
2001 Fairchild Semiconductor Corporation
1N5820-1N5822, Rev. C





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