IRF60B217

Application  Brushed Motor drive applications  BLDC Motor drive applications Battery powered circuits  Half-bridge and full-bridge topologies  Synchronous rectifier applications  Resonant mode power supplies  OR-ing and redundant power switches  DC/DC and AC/DC converters  DC/AC Inverters  D G S Benefits  Improved Gate, Avalanche and Dynamic dV/dt Ruggedness  Fully Characterized Capacitance and Avalanche SOA  Enhanced body diode dV/dt and dI/dt Capability  Lead-Free*  RoHS Compliant, Halogen-Free G Gate IR MOSFET StrongIRFET™ IRHEFXF6E0TB® P2o1we7r MOSFET VDSS RDS(on) typ. max ID 60V 7.3m 9.0m 60A S D G TO-220AB IRF60B217 D Drain S Source Base part number IRF60B217 Package Type TO-220 Standard Pack Form Quantity Tube 50 Orderable Part Number IRF60B217 RDS(on), Drain-to -Source On Resistance ( m) ID , Drain Current (A) 30 ID = 36A 25 20 15 TJ = 125°C 10 5 TJ = 25°C 0 4 8 12 16 VGS, Gate-to-Source Voltage (V) 20 Fig 1. Typical On-Resistance vs. Gate Voltage 1 60 50 40 30 20 10 0 25 50 75 100 125 150 TC , CaseTemperature (°C) 175 Fig 2. Maximum Drain Current vs. Case Temperature 2016– 01-05   IRF60B217 Absolute Maximum Rating Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C Parameter Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) Pulsed Drain Current  Maximum Power Dissipation Linear Derating Factor Max. 60 42 225 83 0.56 VGS Gate-to-So...