N-Channel Power MOSFET
Application Brushed motor drive applications BLDC motor drive applications Battery powered circuits Half-brid...
Description
Application Brushed motor drive applications BLDC motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier applications Resonant mode power supplies OR-ing and redundant power switches DC/DC and AC/DC converters DC/AC inverters
Benefits Improved gate, avalanche and dynamic dv/dt ruggedness Fully characterized capacitance and avalanche SOA Enhanced body diode dv/dt and di/dt capability Lead-free, RoHS compliant
StrongIRFET™ IRF60DM206
DirectFET® N-Channel Power MOSFET
VDSS RDS(on) typ.
max ID
60V 2.2m 2.9m 130A
S
D G
SS SS
ME
D
DirectFET® ISOMETRIC
Base part number IRF60DM206
Package Type DirectFET® ME
Standard Pack
Form
Quantity
Tape and Reel
4800
Orderable Part Number IRF60DM206
RDS(on), Drain-to -Source On Resistance (m ) ID, Drain Current (A)
8 ID = 80A
7
6
5
4 TJ = 125°C
3 TJ = 25°C
2
1 4 6 8 10 12 14 16 18 20 VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
140 120 100
80 60 40 20
0 25
50 75 100 125 TC , Case Temperature (°C)
150
Fig 2. Maximum Drain Current vs. Case Temperature
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June 04, 2015
IRF60DM206
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C IDM PD @TC = 25°C
Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Linear Derating Facto...
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