Document
IR MOSFET StrongIRFET™ IRF60R217
Application Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier applications Resonant mode power supplies OR-ing and redundant power switches DC/DC and AC/DC converters DC/AC Inverters
D
G S
Benefits Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA Enhanced body diode dV/dt and dI/dt Capability Lead-Free, RoHS Compliant
G Gate
VDSS RDS(on) typ.
max ID
60V 8.0m 9.9m
58A
D Drain
D
S G D-Pak IRF60R217
S Source
Base part number Package Type
IRF60R217
D-Pak
Standard Pack
Form
Quantity
Tape and Reel
2000
Orderable Part Number IRF60R217
RDS(on), Drain-to -Source On Resistance (m ) ID, Drain Current (A)
30 ID = 35A
25
20 15 TJ = 125°C
10
5 TJ = 25°C 0
4 6 8 10 12 14 16 18 20 VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
1
60
50
40
30
20
10
0 25
50 75 100 125 150 TC , Case Temperature (°C)
175
Fig 2. Maximum Drain Current vs. Case Temperature
2016-01-05
IRF60R217
Absolute Maximum Rating
Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C
Parameter Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) Pulsed Drain Current
Maximum Power Dissipation Linear Derating Factor
VGS Gate-to-Source Voltage
TJ TSTG
Operating Junction and Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Avalanche Characteristics
EAS (Thermally limited) Single Pulse Avalanche Energy
EAS (Thermally limited) Single Pulse Avalanche Energy IAR Avalanche Current EAR Repetitive Avalanche Energy Thermal Resistance
Symbol
Parameter
RJC Junction-to-Case RJA Junction-to-Ambient (PCB Mount) RJA Junction-to-Ambient
Max. 58 41 217 83 0.56 ± 20
-55 to + 175
300
85 124
See Fig 15, 16, 23a, 23b
Typ. ––– ––– –––
Max. 1.8 50 110
Units
A
W W/°C
V °C
mJ A mJ Units
°C/W
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
V(BR)DSS
Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage
RG Gate Resistance
Min. Typ. Max. 60 ––– –––
––– 0.047 –––
––– 8.0 9.9 ––– 10 ––– 2.1 ––– 3.7 ––– ––– 1.0 ––– ––– 150 ––– ––– 100 ––– ––– -100
––– 2.0 –––
Units
Conditions
V VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1mA
m
VGS = 10V, ID = 35A VGS = 6.0V, ID = 18A
V VDS = VGS, ID = 50µA
µA
VDS = 60V, VGS = 0V VDS = 60V,VGS = 0V,TJ =125°C
nA
VGS = 20V VGS = -20V
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.14mH, RG = 50, IAS = 35A, VGS =10V. ISD 35A, di/dt 862A/µs, VDD V(BR)DSS, TJ 175°C. Pulse width 400µs; duty cycle 2%. Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. R is measured at TJ approximately 90°C. When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to
application note #AN-994.please refer to application note to AN-994: http://www.irf.com/technical-info/appnotes/an-994.pdf
Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 16A, VGS =10V.
2 2016-01-05
IRF60R217
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol gfs Qg Qgs Qgd Qsync td(on) tr td(off) tf Ciss Coss Crss
Coss eff.(ER)
Coss eff.(TR)
Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Total Gate Charge Sync. (Qg– Qgd) Turn-On Delay Time Rise Time
Turn-Off Delay Time
Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Effective Output Capacitance (Energy Related) Output Capacitance (Time Related)
Min. 120 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– –––
–––
–––
Typ. ––– 40 10 12 28 7.6 29 21 12 2170 210 130
228
283
Max. Units
Conditions
––– S VDS = 10V, ID = 35A 66 ID = 35A
––– –––
nC
VVDGSS
= =
30V 10V
–––
––– VDD =30V
––– –––
ns
ID = 35A RG= 2.7
––– VGS = 10V
––– VGS = 0V
––– VDS = 25V
––– pF ƒ = 1.0MHz, See Fig. 7
––– VGS = 0V, VDS = 0V to 48V
––– VGS = 0V, VDS = 0V to 48V
Diode Characteristics
Symbol IS
ISM
Parameter
Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)
Min. –––
–––
Typ. –––
–––
Max. Units
Conditions
58 217
MOSFET symbol
A
showing the integral reverse
p-n junction diode.
G
D S
VSD dv/dt trr
Qrr IRRM
Diode Forward Voltage Peak Diode Recovery dv/dt Reverse Recovery Time
Reverse .