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IRF60R217 Dataheets PDF



Part Number IRF60R217
Manufacturers Infineon
Logo Infineon
Description IR MOSFET
Datasheet IRF60R217 DatasheetIRF60R217 Datasheet (PDF)

IR MOSFET StrongIRFET™ IRF60R217 Application  Brushed Motor drive applications  BLDC Motor drive applications Battery powered circuits  Half-bridge and full-bridge topologies  Synchronous rectifier applications  Resonant mode power supplies  OR-ing and redundant power switches  DC/DC and AC/DC converters  DC/AC Inverters  D G S Benefits  Improved Gate, Avalanche and Dynamic dV/dt Ruggedness  Fully Characterized Capacitance and Avalanche SOA  Enhanced body diode dV/dt a.

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IR MOSFET StrongIRFET™ IRF60R217 Application  Brushed Motor drive applications  BLDC Motor drive applications Battery powered circuits  Half-bridge and full-bridge topologies  Synchronous rectifier applications  Resonant mode power supplies  OR-ing and redundant power switches  DC/DC and AC/DC converters  DC/AC Inverters  D G S Benefits  Improved Gate, Avalanche and Dynamic dV/dt Ruggedness  Fully Characterized Capacitance and Avalanche SOA  Enhanced body diode dV/dt and dI/dt Capability  Lead-Free, RoHS Compliant G Gate VDSS RDS(on) typ. max ID 60V 8.0m 9.9m 58A D Drain D S G D-Pak IRF60R217 S Source Base part number Package Type IRF60R217 D-Pak Standard Pack Form Quantity Tape and Reel 2000 Orderable Part Number IRF60R217 RDS(on), Drain-to -Source On Resistance (m ) ID, Drain Current (A) 30 ID = 35A 25 20 15 TJ = 125°C 10 5 TJ = 25°C 0 4 6 8 10 12 14 16 18 20 VGS, Gate -to -Source Voltage (V) Fig 1. Typical On-Resistance vs. Gate Voltage 1 60 50 40 30 20 10 0 25 50 75 100 125 150 TC , Case Temperature (°C) 175 Fig 2. Maximum Drain Current vs. Case Temperature 2016-01-05   IRF60R217 Absolute Maximum Rating Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C Parameter Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) Pulsed Drain Current  Maximum Power Dissipation Linear Derating Factor VGS Gate-to-Source Voltage TJ TSTG Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Avalanche Characteristics  EAS (Thermally limited) Single Pulse Avalanche Energy  EAS (Thermally limited) Single Pulse Avalanche Energy  IAR Avalanche Current  EAR Repetitive Avalanche Energy  Thermal Resistance   Symbol Parameter RJC Junction-to-Case  RJA Junction-to-Ambient (PCB Mount)  RJA Junction-to-Ambient  Max. 58 41 217 83 0.56 ± 20 -55 to + 175   300 85 124 See Fig 15, 16, 23a, 23b Typ. ––– ––– ––– Max. 1.8 50 110 Units A  W W/°C V °C   mJ A mJ Units °C/W   Static @ TJ = 25°C (unless otherwise specified) Symbol Parameter V(BR)DSS Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage IDSS Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage RG Gate Resistance Min. Typ. Max. 60 ––– ––– ––– 0.047 ––– ––– 8.0 9.9 ––– 10 ––– 2.1 ––– 3.7 ––– ––– 1.0 ––– ––– 150 ––– ––– 100 ––– ––– -100 ––– 2.0 ––– Units Conditions V VGS = 0V, ID = 250µA V/°C Reference to 25°C, ID = 1mA  m VGS = 10V, ID = 35A  VGS = 6.0V, ID = 18A  V VDS = VGS, ID = 50µA µA VDS = 60V, VGS = 0V VDS = 60V,VGS = 0V,TJ =125°C nA VGS = 20V VGS = -20V  Notes:  Repetitive rating; pulse width limited by max. junction temperature.  Limited by TJmax, starting TJ = 25°C, L = 0.14mH, RG = 50, IAS = 35A, VGS =10V.  ISD  35A, di/dt  862A/µs, VDD  V(BR)DSS, TJ 175°C.  Pulse width  400µs; duty cycle  2%.  Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.  Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS.  R is measured at TJ approximately 90°C. When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994.please refer to application note to AN-994: http://www.irf.com/technical-info/appnotes/an-994.pdf  Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 16A, VGS =10V. 2 2016-01-05   IRF60R217 Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Symbol gfs Qg Qgs Qgd Qsync td(on) tr td(off) tf Ciss Coss Crss Coss eff.(ER) Coss eff.(TR) Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Total Gate Charge Sync. (Qg– Qgd) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Effective Output Capacitance (Energy Related) Output Capacitance (Time Related) Min. 120 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 40 10 12 28 7.6 29 21 12 2170 210 130 228 283 Max. Units Conditions ––– S VDS = 10V, ID = 35A 66 ID = 35A ––– ––– nC  VVDGSS = = 30V 10V ––– ––– VDD =30V ––– ––– ns ID = 35A RG= 2.7 ––– VGS = 10V  ––– VGS = 0V ––– VDS = 25V ––– pF   ƒ = 1.0MHz, See Fig. 7 ––– VGS = 0V, VDS = 0V to 48V ––– VGS = 0V, VDS = 0V to 48V Diode Characteristics   Symbol IS ISM Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Min. ––– ––– Typ. ––– ––– Max. Units Conditions 58 217 MOSFET symbol A showing the integral reverse p-n junction diode. G D S VSD dv/dt trr Qrr IRRM Diode Forward Voltage Peak Diode Recovery dv/dt  Reverse Recovery Time Reverse .


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