IRF60R217

IR MOSFET StrongIRFET™ IRF60R217 Application  Brushed Motor drive applications  BLDC Motor drive applications Battery powered circuits  Half-bridge and full-bridge topologies  Synchronous rectifier applications  Resonant mode power supplies  OR-ing and redundant power switches  DC/DC and AC/DC converters  DC/AC Inverters  D G S Benefits  Improved Gate, Avalanche and Dynamic dV/dt Ruggedness  Fully Characterized Capacitance and Avalanche SOA  Enhanced body diode dV/dt and dI/dt Capability  Lead-Free, RoHS Compliant G Gate VDSS RDS(on) typ. max ID 60V 8.0m 9.9m 58A D Drain D S G D-Pak IRF60R217 S Source Base part number Package Type IRF60R217 D-Pak Standard Pack Form Quantity Tape and Reel 2000 Orderable Part Number IRF60R217 RDS(on), Drain-to -Source On Resistance (m ) ID, Drain Current (A) 30 ID = 35A 25 20 15 TJ = 125°C 10 5 TJ = 25°C 0 4 6 8 10 12 14 16 18 20 VGS, Gate -to -Source Voltage (V) Fig 1. Typical On-Resistance vs. Gate Voltage 1 60 50 40 30 20 10 0 25 50 75 100 125 150 TC , Case Temperature (°C) 175 Fig 2. Maximum Drain Current vs. Case Temperature 2016-01-05   IRF60R217 Absolute Maximum Rating Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C Parameter Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) Pulsed Drain Current  Maximum Power Dissipation Linear Derating Factor VGS Gate-to-Source Voltage TJ TSTG Operating Junction and St...