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MBR20100CTR Dataheets PDF



Part Number MBR20100CTR
Manufacturers Thinki Semiconductor
Logo Thinki Semiconductor
Description 20 Ampere Heatsink Dual Common Anode Schottky Half Bridge Rectifiers
Datasheet MBR20100CTR DatasheetMBR20100CTR Datasheet (PDF)

MBR20100CTR thru MBR20200CTR ® Pb Free Plating Product MBR20100CTR/MBR20150CTR/MBR20200CTR Pb 20 Ampere Heatsink Dual Common Anode Schottky Half Bridge Rectifiers Features HMBR matured technology with high reliablity Low forward voltage drop High current capability Low reverse leakage current High surge current capability Application Automotive Inverters and Solar Inverters Plating Power Supply,SMPS,EPS and UPS Car Audio Amplifiers and Sound Device Systems TO-220AB 9.90±0.20 φ3.60±0.20 .

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MBR20100CTR thru MBR20200CTR ® Pb Free Plating Product MBR20100CTR/MBR20150CTR/MBR20200CTR Pb 20 Ampere Heatsink Dual Common Anode Schottky Half Bridge Rectifiers Features HMBR matured technology with high reliablity Low forward voltage drop High current capability Low reverse leakage current High surge current capability Application Automotive Inverters and Solar Inverters Plating Power Supply,SMPS,EPS and UPS Car Audio Amplifiers and Sound Device Systems TO-220AB 9.90±0.20 φ3.60±0.20 4.50±0.20 Unit:mm 1.30±0.20 6.50±0.20 15.70±0.20 2.80±0.20 9.19±0.20 1.27±0.20 1.52±0.20 2.40±0.20 3.02±0.20 13.08±0.20 Mechanical Data Case: Heatsink TO-220CE package Epoxy: UL 94V-0 rate flame retardant Terminals: Solderable per MIL-STD-202 method 208 Polarity: As marked on diode body Mounting position: Any Weight: 2.0 gram approximately 2.54typ 2.54typ 0.80±0.20 0.50±0.20 Case Negative Common Anode Suffix "CTR" MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted) PARAMETER SYMBOL MBR20100CTR MBR20150CTR MBR20200CTR UNIT Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current Peak repetitive forward current (Rated VR, Square wave, 20KHz) Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load Peak repetitive reverse surge current (Note 1) Maximum instantaneous forward voltage (Note 2) IF= 10 A, TJ=25℃ IF= 10 A, TJ=125℃ IF= 20 A, TJ=25℃ IF= 20 A, TJ=125℃ Maximum reverse current @ rated VR TJ=25 ℃ TJ=125 ℃ Voltage rate of change (Rated VR) Typical thermal resistance Operating junction temperature range Storage temperature range Note 1: tp = 2.0 μs, 1.0KHz Note 2: Pulse test with PW=300μs, 1% duty cycle VRRM VRMS VDC IF(AV) IFRM IFSM IRRM VF IR dV/dt RθJC TJ TSTG 100 150 200 70 105 140 100 150 200 20 20 150 1 0.5 0.85 0.88 0.75 0.75 0.95 0.97 0.85 0.85 5 2 10000 3.5 - 55 to +175 - 55 to +175 V V V A A A A V μA mA V/μs ℃/W ℃ ℃ Rev.06 © 1995 Thinki Semiconductor Co., Ltd. Page 1/2 http://www.thinkisemi.com.tw/ MBR20100CTR thru MBR20200CTR ® AVERAGE FORWARD CURRENT (A) RATINGS AND CHARACTERISTICS CURVES (TA=25℃ unless otherwise noted) FIG.1 FORWARD CURRENT DERATING CURVE 25 20 15 10 RESISTIVE OR INDUCTIVELOAD 5 WITH HEATSINK 0 25 50 75 100 125 150 175 CASE TEMPERATURE (oC) PEAK FORWARD SURGE CURRENT (A) FIG. 2 MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT PER LEG 180 8.3ms Single Half Sine Wave 150 JEDEC Method 120 90 60 30 0 1 10 NUMBER OF CYCLES AT 60 Hz 100 INSTANTANEOUS FORWARD CURRENT(A) FIG. 3 TYPICAL FORWARD CHARACTERISTICS PER LEG 100 10 TJ=125℃ 1 TJ=25℃ 0.1 PULSE WIDTH=300μs 1% DUTY CYCLE 0.01 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 FORWARD VOLTAGE (V) INSTANTANEOUS REVERSE CURRENT (mA) FIG. 4 TYPICAL REVERSE CHARACTERISTICS PER LEG 10 TJ=125℃ 1 0.1 TJ=75℃ 0.01 0.001 TJ=25℃ 0.0001 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) JUNCTION CAPACITANCE (p.


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