NCE0205I

http://www.ncepower.com Pb Free Product NCE0205I NCE N-Channel Enhancement Mode Power MOSFET Description The NCE0205I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =200V,ID =5A RDS(ON) < 580mΩ @ VGS=10V （Typ：520mΩ） ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Low gate to drain charge to reduce switching losses Schematic diagram Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply Marking and pin assignment 100% ∆Vds TESTED! TO-251 top view Package Marking and Ordering Information Device Marking Device Device Package 0205 NCE0205I TO-251 Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Continuous(TC=100℃) ID (100℃) Pulsed Drain Current Maximum Power Dissipation Operating Junction and Storage Temperature Range IDM PD TJ,TSTG Limit 200 ±20 5 3.5 20 50 -55 To 175 Unit V V A A A W ℃ Wuxi NCE Power Semiconductor Co., Ltd Page 1 v1.0 http://www.ncepower.com Thermal Characteristic Thermal Resistance,Junction-to-Case(Note 2) RθJC Electrical Characteristics (TC=25℃unless otherwise noted) Parameter Symbol Condition Off Characteristics Drain-Source Breakdow...