NCE1502R

http://www.ncepower.com Pb Free Product NCE1502R NCE N-Channel Enhancement Mode Power MOSFET Description The NCE1502R uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 150V,ID = 2A RDS(ON) < 300mΩ @ VGS=10V (Typ:260mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Excellent package for good heat dissipation Application ● Power switching application ● Hard switched and high frequency circuits D G S Schematic diagram SOT-223-3L view Package Marking and Ordering Information Device Marking Device Device Package NCE1502R NCE1502R SOT-223-3L Reel Size Ø330mm Tape width 12mm Quantity 2500 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous Drain Current-Pulsed (Note 1) ID IDM Maximum Power Dissipation PD Operating Junction and Storage Temperature Range TJ,TSTG Limit 150 ±20 2 6 2 -55 To 150 Unit V V A A W ℃ Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) RθJA 62.5 ℃/W Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current BVDSS IDSS VGS=0V ID=250μA VDS=150V,VGS=0V Min Typ Max Unit 150 - - V - - 1 μA Wuxi NCE Power Semiconductor Co., L...