NCE60R360F

NCE60R360D,NCE60R360,NCE60R360F N-Channel Super Junction Power MOSFET Ⅱ General Description The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications. Features ●New technology for high voltage device ●Low on-resistance and low conduction losses ●small package ●Ultra Low Gate Charge cause lower driving requirements ●100% Avalanche Tested ●ROHS compliant TVDS@ jmax RDS(ON)MAX ID 650 360 11 V mΩ A Application ● Power factor correction（PFC） ● Switched mode power supplies(SMPS) ● Uninterruptible Power Supply（UPS） Schematic diagram Package Marking And Ordering Information Device Device Package Marking NCE60R360D TO-263 NCE60R360D NCE60R360 TO-220 NCE60R360 NCE60R360F TO-220F NCE60R360F TO-263 TO-220 TO-220F Table 1. Absolute Maximum Ratings (TC=25℃) Parameter Symbol Drain-Source Voltage (VGS=0V） Gate-Source Voltage (VDS=0V) Continuous Drain Current at Tc=25°C Continuous Drain Current at Tc=100°C Pulsed drain current (Note 1) Maximum Power Dissipation(Tc=25℃) Derate above 25°C Single pulse avalanche energy (Note2) Avalanche current(Note 1) Repetitive Avalanche energy ，tAR limited by Tjmax (Note 1) VDS VGS ID (DC) ID (DC) IDM (pluse) PD EAS IAR EAR NCE60R360D NCE60R360F NCE60R360 600 ±30 11 11* 7 7* 33 33* 121 32.7 0.97 0.26 280 5.5 0.5 Unit V V A A A W W...