NCEP01T13 MOSFET Datasheet

NCEP01T13 Datasheet, PDF, Equivalent


Part Number

NCEP01T13

Description

N-Channel Super Trench Power MOSFET

Manufacture

NCE Power Semiconductor

Total Page 7 Pages
Datasheet
Download NCEP01T13 Datasheet


NCEP01T13
http://www.ncepower.com
Pb Free Product
NCEP01T13
NCE N-Channel Super Trench Power MOSFET
Description
The NCEP01T13 uses Super Trench technology that is
uniquely optimized to provide the most efficient high
frequency switching performance. Both conduction and
switching power losses are minimized due to an extremely
low combination of RDS(ON) and Qg. This device is ideal for
high-frequency switching and synchronous rectification.
General Features
VDS =100V,ID =135A
RDS(ON) <4.5m@ VGS=10V
Excellent gate charge x RDS(on) product
Very low on-resistance RDS(on)
175 °C operating temperature
Pb-free lead plating
100% UIS tested
Schematic diagram
Marking and pin assignment
Application
DC/DC Converter
Ideal for high-frequency switching and synchronous
rectification
100% UIS TESTED!
100% Vds TESTED!
TO-220-3L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
NCEP01T13
NCEP01T13
TO-220-3L
-
-
Absolute Maximum Ratings (TC=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Limit
100
±20
Drain Current-Continuous (Silicon Limited)
ID 150
Drain Current-Continuous (Package Limited)
ID 135
Drain Current-Continuous(TC=100)
Pulsed Drain Current
Maximum Power Dissipation
Derating factor
Single pulse avalanche energy (Note 5)
Operating Junction and Storage Temperature Range
ID (100)
IDM
PD
EAS
TJ,TSTG
108
500
220
1.5
1156
-55 To 175
Quantity
-
Unit
V
V
A
A
A
A
W
W/
mJ
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
v2.0

NCEP01T13
http://www.ncepower.com
Pb Free Product
NCEP01T13
Thermal Characteristic
Thermal Resistance,Junction-to-Case(Note 2)
RθJC
Electrical Characteristics (TC=25unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics (Note 3)
BVDSS
IDSS
IGSS
VGS=0V ID=250μA
VDS=100V,VGS=0V
VGS=±20V,VDS=0V
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics (Note4)
VGS(th)
RDS(ON)
gFS
VDS=VGS,ID=250μA
VGS=10V, ID=60A
VDS=10V,ID=60A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Clss
Coss
Crss
VDS=50V,VGS=0V,
F=1.0MHz
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDD=50V,ID=60A
VGS=10V,RG=4.7
VDS=50V,ID=60A,
VGS=10V
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
VSD VGS=0V,IS=135A
IS
trr TJ = 25°C, IF = IS
Qrr di/dt = 100A/μs(Note3)
0.7 /W
Min Typ Max Unit
100
--
--
-
1
±100
V
μA
nA
2.5
- 3.65
70 -
4.5
4.5
-
V
m
S
- 7500
- 1500
- 70
-
-
-
PF
PF
PF
- 28
- 60
- 50
- 16
- 105
- 48
- 19
-
-
-
-
nS
nS
nS
nS
nC
nC
nC
- 1.2
- - 135
- 80
- 195
V
A
nS
nC
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
5. EAS condition : Tj=25,VDD=50V,VG=10V,L=0.5mH,Rg=25
Wuxi NCE Power Semiconductor Co., Ltd
Page 2
v2.0


Features http://www.ncepower.com Pb Free Product NCEP01T13 NCE N-Channel Super Trench Power MOSFET Description The NCEP01T13 uses Super Trench technology that is un iquely optimized to provide the most ef ficient high frequency switching perfor mance. Both conduction and switching po wer losses are minimized due to an extr emely low combination of RDS(ON) and Qg . This device is ideal for high-frequen cy switching and synchronous rectificat ion. General Features ● VDS =100V,ID =135A RDS(ON) <4.5mΩ @ VGS=10V ● Ex cellent gate charge x RDS(on) product Very low on-resistance RDS(on) ● 1 75 °C operating temperature ● Pb-fre e lead plating ● 100% UIS tested Sch ematic diagram Marking and pin assignme nt Application ● DC/DC Converter ● Ideal for high-frequency switching and synchronous rectification 100% UIS TE STED! 100% ∆Vds TESTED! TO-220-3L t op view Package Marking and Ordering I nformation Device Marking Device Dev ice Package Reel Size Tape width NCEP01T13 NCEP01T13 TO-220-3L - - Absolute .
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