NCEP85T25D

http://www.ncepower.com Pb Free Product NCEP85T25D NCE N-Channel Super Trench Power MOSFET Description The NCEP85T25D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. General Features ● VDS =85V,ID =250A RDS(ON) <2.8mΩ @ VGS=10V ● Excellent gate charge x RDS(on) product ● Very low on-resistance RDS(on) ● 175 °C operating temperature ● Pb-free lead plating ● 100% UIS tested Schematic diagram Application ● DC/DC Converter ● Ideal for high-frequency switching and synchronous rectification Marking and pin assignment 100% UIS TESTED! 100% ∆Vds TESTED! TO-263-2L top view Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width NCEP85T25D NCEP85T25D TO-263-2L - - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Limit 85 ±20 Drain Current-Continuous ID 250 Drain Current-Continuous(TC=100℃) Pulsed Drain Current Maximum Power Dissipation Derating factor Single pulse avalanche energy (Note 5) Operating Junction and Storage Temperature Range ID (100℃) IDM PD EAS TJ,TSTG 180 800 300 2 1700 -55 To 175 Quantity - Unit V V A A A W W/℃ mJ ℃ Wuxi NCE Power Semiconductor Co., Ltd Page...