SFF25P20

Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: (562) 404-4474 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com DESIGNER’S DATA SHEET Part Number/Ordering Information 1/ SFF25P20 ___ ___ │ └ Screening 2/ │ __ = Not Screened │ TX = TX Level │ TXV = TXV │ └ S = S Level Package 2/ S2I = SMD2 Isolated M = TO-254 Maximum Ratings Drain - Source Voltage Gate – Source Voltage Max. Continuous Drain Current Max. Instantaneous Drain Current (Tj limited) Max. Avalanche current Repetitive Avalanche Energy Total Power Dissipation Operating & Storage Temperature Maximum Thermal Resistance SFF25P20 Series 25 AMP / 200 Volts 150 mΩ typical P-Channel MOSFET Features: polySi gate cell structure Low ON-resistance UIS (unclamped inductive switching) rated Hermetically Sealed, Isolated Package Low package inductance Stress relief provided by flexible leads – several options available Improved (RDS(ON) QG) figure of merit TX, TXV, S-Level screening available Continuous transient @ TC = 25ºC @ TC = 25ºC @ TC = 25ºC Junction to Case Symbol VDSS VGS ID1 ID3 IAR EAR PD TOP & TSTG R0JC Value -200 ±20 ±30 25 95 25 30 250 -55 to +150 0.83 0.6 typical Units V V A A A mJ W ºC ºC/W NOTES: 1/ For ordering information, price, operating curves, and availability- Contact factory. 2/ Screening based on MIL-PRF-19500. Screening flows available on request. 3/ Unless otherwise specified, all electrical characteristics @25ºC. SMD 2 Isolated...