VNL5030J-E

PowerSSO-12 Features SO-8 Type VNL5030J-E VNL5030S5-E Vclamp 41 V RDS(on) 30 mΩ ID 25 A Automotive qualified Drain current: 25 A ESD protection Overvoltage clamp Thermal shutdown Current and power limitation Very low standby current Very low electromagnetic susceptibility Compliant with European directive 2002/95/EC Open drain status output VNL5030J-E VNL5030S5-E OMNIFET III fully protected low-side driver Datasheet - production data Description The VNL5030J-E and VNL5030S5-E are monolithic devices made using STMicroelectronics® VIPower® technology, intended for driving resistive or inductive loads with one side connected to the battery. Built-in thermal shutdown protects the chip from overtemperature and short-circuit. Output current limitation protects the devices in an overload condition. In case of long duration overload, the device limits the dissipated power to a safe level up to thermal shutdown intervention.Thermal shutdown, with automatic restart, allows the device to recover normal operation as soon as a fault condition disappears. Fast demagnetization of inductive loads is achieved at turn-off. Package PowerSSO-12 SO-8 Table 1. Devices summary Order codes Tube VNL5030J-E VNL5030S5-E Tape and reel VNL5030JTR-E VNL5030S5TR-E November 2013 This is information on a product in full production. DocID022767 Rev 6 1/28 www.st.com Contents Contents VNL5030J-E/ VNL5030S5-E 1 Block diagrams and pins configurations . . . . . . . . . . . . ....