fully protected low-side driver
VNLD5160-E
OMNIFET III fully protected low-side driver
Datasheet - production data
SO-8
Features
Type VNLD5160-E
V...
Description
VNLD5160-E
OMNIFET III fully protected low-side driver
Datasheet - production data
SO-8
Features
Type VNLD5160-E
Vclamp 41 V
RDS(on) 160 mΩ
ID 3.5 A
Automotive qualified Drain current: 3.5 A ESD protection Overvoltage clamp Thermal shutdown Current and power limitation Very low standby current Very low electromagnetic susceptibility Compliant with European directive 2002/95/EC Open drain status output Specially intended for R10W or 2xR5W
automotive signal lamps
Description
The VNLD5160-E is a monolithic device made using STMicroelectronics® VIPower® technology, intended for driving resistive or inductive loads with one side connected to the battery. Built-in thermal shutdown protects the chip from overtemperature and short-circuit. Output current limitation protects the device in an overload condition. In case of long duration overload, the device limits the dissipated power to a safe level up to thermal shutdown intervention.Thermal shutdown, with automatic restart, allows the device to recover normal operation as soon as a fault condition disappears. Fast demagnetization of inductive loads is achieved at turn-off.
Package SO-8
Table 1. Devices summary Order codes
Tube VNLD5160-E
Tape and reel VNLD5160TR-E
September 2015
This is information on a product in full production.
DocID027681 Rev 2
1/20
www.st.com
Contents
Contents
VNLD5160-E
1 Block diagrams and pins configurations . . . . . . . . . . . . . . . . . . . . . . . . 5
2 Electric...
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