BAW101S

SMD Type High Voltage Double Diode BAW101S Diodes +0.11.25 -0.1 Features Small plastic SMD package High switching speed: max. 50 ns High continuous reverse voltage: 300 V Electrically insulated diodes. 0.1max SOT-363 1.3+0.1 -0.1 0.65 Unit: mm 0.525 +0.152.3 -0.15 0.36 0.3+0.1 -0.1 2.1+0.1 -0.1 0.1+0.05 -0.02 +0.050.95 -0.05 Absolute Maximum Ratings Ta = 25 Per diode Parameter Symbol Conditions Min continuous reverse voltage VR series connection repetitive peak forward current continuous forward current repetitive peak forward current non-repetitive peak forward current total power dissipation storage temperature junction temperature operating ambient temperature thermal resistance from junction to soldering point thermal resistance from junction to ambient VRRM IF IFRM IFSM Ptot Tstg Tj Tamb Rth j-s Rth j-a series connection single diode loaded; double diode loaded; square wave; Tj = 25 prior to surge;t = 1 s Ts = 25 -65 -65 Max Unit 300 600 300 600 250 140 625 4.5 350 +150 150 +150 255 357 V V mA mA A mW K/W K/W www.kexin.com.cn 1 SMD Type BAW101S Diodes Electrical Characteristics Ta = 25 Parameter Symbol Conditions Min Max Unit reverse breakdown voltage VBR(R) IR = 100 A 300 forward voltage VF IF = 100 mA; note 1 1.1 mV reverse current VR = 25 V IR VR = 250 V; Tamb = 150 150 nA 50 A reverse recovery time when switched from IF = 30 mA to IR = 30 mA; trr RL = 100 ; measured at IR = 3 mA; 50 ns diode capacitance Cd VR = 0; f...